Epitaxial growth ofβ-Ga_(2)O_(3)thin films on Ga_(2)O_(3)and Al_(2)O_(3)substrates by using pulsed laser deposition  

作　　者：Yuxin An Liyan Dai Ying Wu Biao Wu Yanfei Zhao Tong Liu Hui Hao Zhengcheng Li Gang Niu Jinping Zhang Zhiyong Quan Sunan Dingy 

机构地区：[1]Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education School of Chemistry and Materials Science Shanxi Normal University,Linfen 041004,P.R.China [2]Vacuum Interconnected Nanotech Workstation(Nano-X)Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO)Chinese Academy of Sciences(CAS),Suzhou 215123,P.R.China [3]Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education&International Center for Dielectric Research,School of Electronic and Information Xi’an Jiaotong University,Xi’an 710049,P.R.China

出　　处：《Journal of Advanced Dielectrics》2019年第4期47-53,共7页先进电介质学报（英文）

基　　金：the National Natural Science Foundation of China(61674165,61604167,61574160,61704183,61404159,11604366);the Natural Science Foundation of Jiangsu Province(BK20170432,BK20160397,BK20140394);the National Key R&D Program of China(2016YFB0401803);the Strategic Priority Research Program of the Chinese Academy of Science(XDA09020401);XRD,AFM and TEM experiments were performed at the Platform for Characterization&Test,Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO),Chinese Academy of Sciences.

摘　　要：In this work,we have successfully grown high quality epitaxialβ-Ga_(2)O_(3)thin films onβ-Ga_(2)O_(3)(100)and Al_(2)O_(3)(0001)substrates using pulsed laser deposition(PLD).By optimizing temperature and oxygen pressure,the best conditions were found to be 650-700℃and 0.5 Pa.To further improve the quality of hetero-epitaxialβ-Ga_(2)O_(3),the sapphire substrates were pretreated for atomic terraced surface by chemical cleaning and high temperature annealing.From the optical transmittance measurements,the films grown at 600-750℃exhibit a clear absorption edge at deep ultraviolet region around 250-275 nm wavelength.High resolution transmission electron microscope(HRTEM)images and X-ray diffraction(XRD)patterns demonstrate thatβ-Ga_(2)O_(3)(-201)//Al_(2)O_(3)(0001)epitaxial texture dominated the epitaxial oxide films on sapphire substrate,which opens up the possibilities of high power electric devices.

关 键 词：Oxide semiconductor β-Ga_(2)O_(3)epitaxy optical transmission spectrum pulsed laser deposition crystal growth 

分 类 号：O48[理学—固体物理]