浅谈多晶硅生产中碳杂质的分布和去除  

Discussion on the distribution and removal of carbon impurities in polysilicon production

作　　者：何鹏 杨洋 HE Peng;YANG Yang(Inner Mongolia Tongwei high purity crystalline silicon Co.,Ltd.,Baotou 014000,Inner Mongolia)

机构地区：[1]内蒙古通威高纯晶硅有限公司,内蒙古包头014000

出　　处：《世界有色金属》2022年第16期144-147,共4页World Nonferrous Metals

摘　　要：多晶硅企业生产中,从工业硅不可避免的引入碳杂质,在氯硅烷体系中以甲基取代基的形式体现,在氢气中以甲烷、一氧化碳或二氧化碳体现,最终,以代位碳(碳化硅)的形式体现。随着N型单晶硅的和半导体晶硅的发展,研究碳杂质的分布和去除已是多晶硅企业科技进步的重点。In the production of polysilicon enterprises,carbon impurities are inevitably introduced from metal grade silicon.In chlorosilane system,it is represented in the form of methyl substituent.In hydrogen,it is represented in the form of methane,carbon monoxide or carbon dioxide.Finally,it is represented in the form of substitutional carbon(silicon carbide).With the development of N-type monocrystalline silicon and semiconductor crystalline silicon,the research on the distribution and removal of carbon impurities has become the focus of scientific and technological progress of polycrystalline silicon enterprises.

关 键 词：甲基氯硅烷 三氯氢硅 四氯化硅 取代反应 

分 类 号：TQ127.2[化学工程—无机化工]