Lifetime estimation of IGBT module using square-wave loss discretization and power cycling test  

作　　者：Jie Wang Da-Qing Gao Wan-Zeng Shen Hong-Bin Yan 

机构地区：[1]Institute of Modern Physics,Chinese Academy of Sciences,Lanzhou 730000,China [2]School of Nuclear Science and Technology,University of Chinese Academy of Sciences,Beijing 100049,China [3]School of Nuclear Science and Technology,Lanzhou University,Lanzhou 730000,China

出　　处：《Nuclear Science and Techniques》2022年第10期126-138,共13页核技术（英文）

基　　金：supported by the National Key Research and Development Program of China (No. 2019YFA0405402)。

摘　　要：The insulated gate bipolar transistor(IGBT)module is one of the most age-affected components in the switch power supply, and its reliability prediction is conducive to timely troubleshooting and reduction in safety risks and unnecessary costs. The pulsed current pattern of the accelerator power supply is different from other converter applications;therefore, this study proposed a lifetime estimation method for IGBT modules in pulsed power supplies for accelerator magnets. The proposed methodology was based on junction temperature calculations using square-wave loss discretization and thermal modeling.Comparison results showed that the junction temperature error between the simulation and IR measurements was less than 3%. An AC power cycling test under real pulsed power supply applications was performed via offline wearout monitoring of the tested power IGBT module. After combining the IGBT4 PC curve and fitting the test results,a simple corrected lifetime model was developed to quantitatively evaluate the lifetime of the IGBT module,which can be employed for the accelerator pulsed power supply in engineering. This method can be applied to other IGBT modules and pulsed power supplies.

关 键 词：IGBT module Junction temperature Power cycling test Lifetime prediction Power loss discretization 

分 类 号：TL594[核科学技术—核技术及应用] TN322.8[电子电信—物理电子学]