Structural and ferroelectric properties of Sr_(1-x)Ba_(x)Bi_(2)Nb_(2)O_(9)thin films obtained by dip-coating  

作　　者：Y.Gonzalez-Abreu A.Pelaiz-Barranco P.Saint-Gregoire C.E.Moreno-Crespo H.Limborço J.C.Gonzalez 

机构地区：[1]Facultad de Fisica-IMRE,Universidad de La Habana.San Lazaro y L,Vedado La Habana 10400,Cuba [2]MIPA Laboratory,University of Nîmes,Rue du Docteur Georges Salan CS 13019,30021 Nîmescedex,France [3]Departamento de Fisica-ICEX,Universidade Federal de Minas Gerais Belo Horizonte,MG 31270-901,Brasil

出　　处：《Journal of Advanced Dielectrics》2017年第5期57-61,共5页先进电介质学报（英文）

基　　金：the Third World Academy of Sciences(RG/PHYS/LA Nos.99-050,02-225 and 05-043);to the ICTP,Trieste-Italy,for financial support of Latin-American Network of Ferroelectric Materials(NET-43,currently NT-02).

摘　　要：The paper presents the structural and ferroelectric results for Sr_(1-x)Ba_(x)Bi_(2)Nb_(2)O_(9)(x=0.30;0.85)thin films,which were obtained by using dip-coating.The solutions containing the desirable ions were prepared from the powders of the previous studied ceramic samples.The films were deposited at room temperature on Fluorine-doped Tin Oxide(FTO)substrates and submitted to a heat treatment for crystallization.The films were characterized by using scanning microscopy electronic,energy dispersive spectroscopy and ellipsometry.Hysteresis ferroelectric loops were obtained,at room temperature,by using a Sawyer-Tower circuit at several frequencies.A well-defined grain structure was observed for both compositions.The energy dispersive spectroscopy(EDS)measurements revealed the presence of the corresponding elements from the chemical composition of the ceramic systems.The band-gap energy was around 3.3 eV for both samples.Typical hysteresis loops for normal and relaxor ferroelectrics were obtained for x=0.30 and 0.85,respectively.

关 键 词：FERROELECTRICS AURIVILLIUS thin films relaxor 

分 类 号：TB3[一般工业技术—材料科学与工程]