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作 者:K.P.Chandra A.R.Kulkarni K.Prasad
机构地区:[1]Department of Physics,S.M.College Bhagalpur 812001,India [2]Department of Metallurgical Engineering and Materials Science Indian Institute of Technology,Mumbai 400076,India [3]University Department of Physics T.M.Bhagalpur University,Bhagalpur 812007,India
出 处:《Journal of Advanced Dielectrics》2017年第4期22-28,共7页先进电介质学报(英文)
摘 要:Temperature dependent X-ray diffraction(XRD)and dielectric properties of perovskite Ba(Zr_(0.2)Ti_(0.8))O_(3) ceramic prepared using a standard solid-state reaction process is presented.Along with phase transitions at low temperature,a new phase transition at high temperature(873℃ at 20 Hz),diffusive in character has been found where the lattice structure changes from monoclinic(space group:P2=m) to hexagonal(space group:P6=mmm).This result places present ceramic in the list of potential candidate for intended high temperature applications.The AC conductivity data followed hopping type charge conduction and supports jump relaxation model.The experimental value of d_(33)=98 pC/N was found.The dependence of polarization and strain on electric field at room temperature suggested that lead-free Ba(Zr_(0.2)Ti_(0.8))O_(3) is a promising material for electrostrictive applications.
关 键 词:Lead-free ceramic structure dielectric properties phase transition AC conductivity PIEZOELECTRIC ELECTROSTRICTION
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