基于InP/In_(1-x)Ga_(x)As_(y)P_(1-y)加载条状波导的宽带波长转换数值研究  

Numerical Study of Broadband Wavelength Conversion Based on InP/In_(1-x)Ga_(x)As_(y)P_(1-y)Strip-loaded Waveguide

作　　者：文进 何晨瑶[1] 秦韦俊 孙伟 梁伯植 熊科宇 张辉 武政委 于慧敏 王倩 WEN Jin;HE Chenyao;QIN Weijun;SUN Wei;LIANG Bozhi;XIONG Keyu;ZHANG Hui;WU Zhengwei;YU Huimin;WANG Qian(School of Science,Xi′an Shiyou University,Xi′an 710065,China;State Key Laboratory of Transient Optics and Photonics,Xi′an Institute of Optics and Precision Mechanics,Chinese Academy of Sciences,Xi′an 710119,China)

机构地区：[1]西安石油大学理学院,西安710065 [2]中国科学院西安光学精密机械研究所瞬态光学与光子技术国家重点实验室,西安710119

出　　处：《光子学报》2022年第10期298-307,共10页Acta Photonica Sinica

基　　金：国家自然科学基金(No.61505160);陕西省创新能力支撑计划青年科技新星(No.2018KJXX‒042);陕西省自然科学基础研究计划(No.2019JM‒084);瞬态光学与光子技术国家重点实验室开放课题(No.SKLST202108);西安石油大学研究生创新与实践能力培养计划(No.YCS20211075)。

摘　　要：Ⅲ-Ⅴ族半导体波导平台在实现主动和被动器件单片集成上有自身的优势,同时基于Ⅲ-Ⅴ族材料的波长转换器可以通过非线性效应扩展波长范围。设计了一种基于InP/In_(1-x)Ga_(x)As_(y)P_(1-y)半导体波导平台的加载条状波导,并研究了基于该波导的有效波长转换。通过完美匹配层边界条件下的频域有限元仿真法分析了该波导最佳结构的TE模有效模式面积、非线性系数、有效模式折射率、波导损耗和波导色散。优化InP/In_(1-x)Ga_(x)As_(y)P_(1-y)加载条状波导的色散,使其满足零相位失配条件,实现了3 dB带宽为35 nm的波长转换,最高转换效率为−26.7 dB。同时,还分析了掺杂系数y、泵浦功率、泵浦波长、波导长度等因素对波长转换中转换带宽和转换效率的影响。InP/In_(1-x)Ga_(x)As_(y)P_(1-y)加载条状波导展现了优良的波长转换性能,可为全光波长转换的实现提供设计参考。In recent years,nonlinear integrated optical devices have shown great potential in all-optical signal processing,and a lot of research work has been done on them.The nonlinear integrated optical devices usually use silicon,Ⅲ-Ⅴ,chalcogenide glass and other materials platform.Silicon has very sophisticated low-cost manufacturing platforms,but silicon is an indirect band-gap list of semiconductor materials with very low luminous efficiency,and silicon needs to be integrated with other materials,for example,the integration ofⅢ-Ⅴlasers and amplifiers on a silicon substrate to achieve integrated optical path,which makes the integrated optical path complex and expensive,and has compatibility problems.As_(2)Se_(3) chalcogenide glasses stand out among many materials because of their low linear and nonlinear loss,but their refractive index can not be adjusted within a certain range,which is not conducive to the flexibility of all-optical signal processing.The As_(2)Se_(3) chalcogenide glass platform is not compatible with the Complementary Metal-oxide Semiconductor(COMS)process,and the fabrication process is complex.Various ternary and quaternaryⅢ-Ⅴcompounds with different bandgap wavelengths can form a group of nonlinear photonic materials that can cover the whole spectrum window from ultraviolet to infrared.Ⅲ-Ⅴmaterials can improve the flexibility of custom-made integrated optical devices by changing the components of different materials,within a certain range.Ⅲ-Ⅴsemiconductor platforms enable active and passive integrated optical devices to be combined on the same material platform,which can be achieved by careful design and advanced manufacturing methods,for example,multilayer epitaxy and vertical coning.Ⅲ-Ⅴsemiconductor waveguides have high nonlinear coefficients,and minimal nonlinear absorption can be achieved by selecting the appropriate material composition and operating wavelength.Recent studies have shown that the carrier lifetime ofⅢ-Ⅴlist of semiconductor materials can be reduced to

关 键 词：非线性光学 集成光学 InP/In_(1-x)Ga_(x)As_(y)P_(1-y) 波长转换 四波混频 

分 类 号：O437.4[机械工程—光学工程]