低气压下N型晶硅太阳电池P型发射极的两步扩散法制备研究  

Study on Preparation of P-type Emitter for N-type Crystalline Silicon Solar Cell by Two-step Diffusion Process Under Low Pressure

作　　者：马晓波 曹志杰 沈宏君 樊凯 康欣欣 米金辉 MA Xiaobo;CAO Zhijie;SHEN Hongjun;FAN Kai;KANG Xinxin;MI Jinhui(School of Physics and Electronic-Electrical Engineering,Ningxia University,Yinchuan 750021,China)

机构地区：[1]宁夏大学物理与电子电气工程学院,银川750021

出　　处：《材料导报》2022年第22期185-189,共5页Materials Reports

基　　金：宁夏重点研发项目(2018BEE03002,2018BEB04027);国家自然科学基金(12164035,51801107);第四批宁夏青年科技人才托举工程(TJGC2019002);大学生创新项目(2021107490232)。

摘　　要：太阳能电池是人类使用清洁能源的重要组成部分,在“碳达峰与碳中和”国际政策背景下,大力发展清洁能源技术,是解决能源环境问题的根本性途径。N型太阳能电池具有杂质容忍度大、少子寿命长等优点,更有益于提高电池转换效率和降低生产成本,是高效晶硅太阳能电池发展的主流。然而,硼原子的分凝系数远高于磷原子,使得硼扩散工艺十分困难。基于此,本工作采用两步扩散法,研究低气压下气体流量、预沉积时间、再分布时间等工艺参数对P型发射极方阻和均匀性的影响。通过对硼扩散后N型电池的少子寿命衰减的物理机制进行深入剖析,对所制备N型电池的性能进行表征。最终,在优化工艺的条件下,实现了P发射极的方阻不均匀性不高于4%的有效改善。本研究可为高效N型电池的制备提供重要的技术参考。Solar cells have become an important part of clean energy. Under the background of the international policy of carbon peak and carbon neutral, vigorously developing clean energy technology isa fundamental method to solve the energy and environment problems. N-type solar cells have the advantages of large impurity tolerance and long minority carrier lifetime, which are more beneficial to improve the conversion efficiency of the cell and reduce the cost. It is the mainstream of the high-efficiency crystalline silicon solar cells. However, the separation coefficient of boron atom is much higher than that of phosphorus atom, which makes the boron diffusion process more difficult than phosphorus diffusion. Based on these, two-step diffusion method were adopted under a low pressure to study the influence of process parameters such as the gas flow rate, the pre-deposition time and the redistribution time on the square resistance and the uniformity of diffusion sheet. The physical mechanism of the minority carrier life decay of the N-type cells after boron diffusion was analyzed, and the properties of the prepared N-type cells were characterized. Finally, the square resistance inhomogeneity of the P-type emitter is improved less than 4% under the optimized process. And these results provide an important technical reference for the preparation of the high-efficiency N-type solar cells.

关 键 词：N型晶硅电池 P型发射极 两步扩散法 

分 类 号：TM914.41[电气工程—电力电子与电力传动]