Contribution of piezoelectric effect,electrostriction and ferroelectric/ferroelastic switching to strain-electric field response of dielectrics  

作　　者：G.Viola T.Saunders X.Wei K.B.Chong H.Luo M.J.Reece H.Yan 

机构地区：[1]School of Engineering and Materials Science Queen Mary University of London Mile End Road,London E14NS,UK [2]Nanoforce Technology Ltd Mile End Road,London E14NS,UK [3]Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education&International Center for Dielectric Research Xian Jiaotong University,Xian 710049,P.R.China [4]MIMOS,Technology Park Malaysia 57000 Kuala Lumpur,Malaysia [5]Shanghai Institute of Ceramics Chinese Academy of Sciences,215 Chengbei Road Shanghai 201800,P.R.China

出　　处：《Journal of Advanced Dielectrics》2013年第1期53-63,共11页先进电介质学报（英文）

摘　　要：This paper presents a thorough study of the strain response of different types of electroceramics during dynamical electrical loading.It highlights important aspects to take into account in the experimental methodology and outlines general guidelines for the discussion and interpretation of the results.The contributions of piezoelectric effect,electrostriction and ferroelectric/ferroelastic domain switching to the strain produced during the application of an alternating electric field are discussed by describing the strainelectric field(S-E)loops of different dielectric ceramics in which each of these contributions are predominant.In particular,attention is given to the description of the strain evolution in the characteristic"butterfly loops"typically shown by ferroelectric materials.The strain-polarization loop is indicated as a useful means to reveal the interconnection between strain and polarization state during dynamical electrical loading.Strain rate is suggested as a powerful tool to obtain more detailed information regarding the mechanisms of the electric field-induced strain.

关 键 词：FERROELECTRICS dielectrics domain switching STRAIN polarization butterfly loop 

分 类 号：TQ1[化学工程]