Growth temperature dependence of crystal symmetry in Nb-doped BaTiO_(3) thin films  

作　　者：Young Heon Kim Xubing Lu Marco Diegel Roland Mattheis Dietrich Hesse Marin Alexe 

机构地区：[1]Max Planck Institute of Microstructure Physics Weinberg 2,D-06120 Halle,Germany [2]Korea Research Institute of Standards and Science(KRISS)Daejeon 305-340,Korea [3]South China Academy of Advanced Optoelectronics South China Normal University Guangzhou,510006,P.R.China [4]Institute of Photonic Technology(IPHT)D-07702 Jena,Germany

出　　处：《Journal of Advanced Dielectrics》2013年第2期27-32,共6页先进电介质学报（英文）

基　　金：supported by the Korea Research Council of Fundamental Science and Technology(KRCF)through a Basic Research Project managed by the Korea Research Institute of Standards and Science(KRISS);Support was also given by the Natural Science Foundation of China(Grant No.61271127).

摘　　要：Growth temperature effects on the microstructure of Nb-doped BaTiO_(3) thin films of the composition BaTi_(0.98)Nb_(0.02)O_(3) are studied using X-ray diffraction and transmission electron microscopy(TEM).Reciprocal space maps and electron diffraction patterns show that the a-axis lattice parameter increases and the c-axis parameter decreases with increasing growth temperature,indicating a decrease of tetragonality.Bright-field TEM images show low and high densities of threading defects in films grown at low and high temperatures,respectively.The observations are discussed in terms of a hindering of the cubic-to-tetragonal phase transition by a high defect density and a high unit cell volume.

关 键 词：Nb-doped BaTiO_(3) crystal symmetry threading defect X-ray diffraction transmission electron microscopy 

分 类 号：TG1[金属学及工艺—金属学]