Enhanced ferroelectric properties of highly(100)oriented Pb(Zr_(0.52)Ti_(0.48))O_(3) thick films prepared by chemical solution deposition  

作　　者：Wanlin Zhu Wei Ren Hong Xin Peng Shi Xiaoqing Wu 

机构地区：[1]Electronic Material Research Laboratory,Key Laboratory of the Ministry of Education,&International Center for Dielectric Research,Xi’an JiaotongUniversity,Xi’an,710049,P.R.China

出　　处：《Journal of Advanced Dielectrics》2013年第2期39-46,共8页先进电介质学报（英文）

基　　金：supported by the Natural Science Foundation of China(Grant No.90923001);the International Science&Technology Cooperation Program of China(Grant Nos.2010DFB13640 and 2011DFA51880);the Shaanxi Province International Collaboration Program(Grant Nos.2009KW-12 and 2010KW-09).

摘　　要：Ferroelectric Pb(Zr_(0.52)Ti_(0.48))O_(3)(PZT)thick films with highly(100)preferential orientation have been prepared by chemical solution deposition process on Pt/Ti/SiO_(2)/(100)Si substrates and pyrolyzed at 350℃-450℃,then annealed at 650℃.The typical thickness of the films is 3.9
m.Effects of the pyrolysis temperature and excess PbO on the orientation,dielectric and ferroelectric properties of PZT thick films have been discussed.Domain switching and depoling process were studied by piezoelectric force microscopy.(100)oriented PZT films exhibit enhanced electrical properties.The dielectric constant and loss tangent of the films are 1444 and 0.022 at 1 kHz,respectively.The remnant polarization increases from 27.6 to 34.6μC/cm^(2),and the coercive field decreases from 61.4 to 43.5 kV/cm,when the orientation of the films changes from the random orientation to the preferential(100)orientation.The leakage current density is 10^(-8)A/cm^(2) at dc field of 0.25 kV/cm,and then increases to 10^(-6) A/cm^(2) at 40 kV/cm.The piezoelectric response of the oriented films is investigated by Piezoelecric Force Microscopy(PFM).

关 键 词：PZT films (100)preferred orientation PbO excess pyrolysis temperature electrical properties 

分 类 号：TB3[一般工业技术—材料科学与工程]