基于变压器耦合的2.6GHz功率放大器的设计  

Design of a 2.6 GHz Power Amplifier with Transformer-Coupling

作　　者：颜景 张志浩[1] 彭林 关宇涵 陈哲 章国豪 Yan Jing;Zhang Zhihao;Peng Lin;Guan Yuhan;Chen Zhe;Zhang Guohao(School of Information Engineering,Guangdong University of Technology,Guangzhou 510006,China;Guangzhou Suiyuan Microelectronics Technology Co.,Ltd.,Guangzhou 510670,China)

机构地区：[1]广东工业大学信息工程学院,广州510006 [2]广州穗源微电子科技有限公司,广州510670

出　　处：《半导体技术》2022年第10期824-828,共5页Semiconductor Technology

基　　金：国家重点研发计划项目(2018YFB1802100);国家自然科学基金资助项目(61974035);广州市创业领军团队项目(202009030006)。

摘　　要：基于InGaP/GaAs异质结双极晶体管(HBT)工艺,设计了一款工作频率为2.6 GHz的功率放大器。其输出匹配网络由片外变压器及调谐电容组成,与传统的LC输出匹配网络相比,该匹配网络具有更低的插入损耗和更宽的带宽。功率放大器主体采用伪差分结构,通过变压器耦合进行单端口和差分端口之间的阻抗变换。实测结果表明,在2.6 GHz时,该功率放大器的增益达到了34 dB,饱和输出功率为33.6 dBm,峰值功率附加效率为32%。当输出功率为25 dBm时,邻近信道功率比约为-47 dBc。A power amplifier operating at 2.6 GHz was designed based on InGaP/GaAs hetero-junction bipolar transistor(HBT) technology.The output matching network of the power amplifier consists of an off-chip transformer and a tuning capacitor, which has less insertion loss and wider bandwidth in comparison with conventional LC output matching networks.The main body of the power amplifier adopted a pseudo-differential structure, with two transformers coupling for impedance transformation between single-ended and differential pairs.The measurement results show that the presented power amplifier achieves a gain of 34 dB,a saturated output power of 33.6 dBm, a peak power added efficiency of 32%,and an adjacent channel power ratio of about-47 dBc in an output power of 25 dBm at 2.6 GHz.

关 键 词：伪差分 变压器 功率放大器 异质结双极晶体管(HBT) 功率合成 

分 类 号：TN722[电子电信—电路与系统]