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作 者:王新雷 王玉海[2] Wang Xinlei;Wang Yuhai(R&D Center,Misiliconn Semiconductor Technologies Co.,Ltd.,Foshan 528311,China;College of Chemistry and Environment,South China Normal University,Guangzhou 510006,China)
机构地区:[1]美垦半导体技术有限公司研发中心,广东佛山528311 [2]华南师范大学化学与环境学院,广东广州510006
出 处:《科学技术创新》2022年第35期177-180,共4页Scientific and Technological Innovation
摘 要:对纯HIPS和耐候HIPS在UVA、UVB以及氙灯的加速条件下进行人工老化行为模拟研究。结果发现,随着老化时间的增加,三种人工老化方法均使HIPS羰基和羟基吸收峰增加。UVB老化后,纯HIPS的断裂伸长率、冲击强度均显著下降,拉伸强度和弯曲强度逐渐降低,弯曲模量上升,而耐候HIPS相对应的力学性能下降缓慢。SEM表明,纯HIPS在UVB老化后表面发现大量裂纹,而耐候HIPS显示出良好的耐老化特性。The artificial aging behavior of pure HIPS and stabilized HIPS was studied under the accelerated conditions of UVA,UVB and xenon lamps.The results showed that the carbonyl and hydroxyl absorption peaks of HIPS increased with the aging time.After UVB aging,the elongation at break and impact strength of pure HIPS decreased significantly,the tensile strength and bending strength decreased gradually,and the bending modulus increased,while the corresponding mechanical properties of stabilized HIPS decreased slowly.SEM showed that a lot of cracks were found on the surface of pure HIPS after UVB aging,and the stabilized HIPS showed good aging resistance.
分 类 号:TQ320.1[化学工程—合成树脂塑料工业] TQ325.2
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