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作 者:RENBING SUN DI LIN QINHUI ZHANG BIJUN FANG HAIWU ZHANG XIAOBING LI SHENG WANG DONG WANG XIANGYONG ZHAO HAOSU LUO
机构地区:[1]Key Laboratory of Inorganic Functional Material and Device Shanghai Institute of Ceramics,Chinese Academy of Sciences 215 Chengbei Road,Jiading,Shanghai 201800,P.R.China [2]School of Materials Science and Engineering Changzhou University,Changzhou,Jiangsu 213164,P.R.China [3]Graduate School of the Chinese Academy of Sciences Beijing 10039,P.R.China
出 处:《Journal of Advanced Dielectrics》2011年第2期237-242,共6页先进电介质学报(英文)
基 金:the Ministry of Science and Technology of China through 973 Program(No.2009CB623305);National Key Technology R&D Program(No.2010BAK69B26);the Natural Science Foundation of China(Nos.60837003,50777065,61001041 and 11090332);Science and Technology Commission of Shanghai Municipality(Nos.10520712700,10JC1415900 and 10dz0583400);the Innovation Fund of Shanghai Institute of Ceramics(Nos.O99ZC4140G andO99ZC1110G);Shanghai Rising-Star Program(No.11QA1407500).
摘 要:The 0.96Na_(0.5)Bi_(0.5)TiO_(3)-0.04K_(0.5)Bi_(0.5)TiO_(3)(NKBT96/4)lead-free single crystal was successfullygrown by top-seeded solution growth method.The effective segregation coefficient for K was calculated to be 0.20.X-ray powder difraction measurement showed that the as-grown crystalpossesses rhombohedral perovskite structure at room temperature.X-ray rock curve measureindicated that the as-grown single crystal owned relatively higher quality.The NKBT96/4 singlecrystal exhibits apparent diffused dielectric behavior,where the diffusiveness index aαis 1.79 forthe[001]-oriented crystal planes.A notable thermal hysteresis,△T_(h),of 25℃was disclosed for thetetragonal antiferroelectric-tetragonal paraelectric phase transition in the dielectric propertystudies between heating and cooling.The highest remnant polarization,P_(r),16.8μC/cm^(2),wasobtained at 100℃.The electromechanical coupling coefficient k_(t)of the[001]-oriented crystalplanes at room temperat ure was determined to be 38%using resonance-antiresonance technique.The room temperature piezoelectric constant d_(33)reaches 120 pC/N.
关 键 词:LEAD-FREE top-seeded solution growth method electrical properties segregationcoefficient.
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