MAGNETOELECTRIC RESPONSES IN MULTIFERROIC COMPOSITE THIN FILMS  

作　　者：JIA-MIAN HU JING MA JING WANG ZHENG LI YUAN-HUA LIN C.W.NAN 

机构地区：[1]Department of Materials Science and Engineering and State Key Lab of New Ceramics and Fine Processing Tsinghua University,Beijing 100084,P.R.China

出　　处：《Journal of Advanced Dielectrics》2011年第1期1-16,共16页先进电介质学报（英文）

基　　金：This work was supported by the NSF of China(Grant Nos.50832003 and 50921061);the National Basic Research Program of China(Grant No.2009CB623303).

摘　　要：Multiferroic composite thinfilms of ferroelectrics and magnets have attracted ever-increasing interest in most recent years.In this review,magnetoelectric(ME)responses as well as their underlying ME coupling mechanisms in such multiferroic composite thinfilms are discussed,oriented by their potential applications in novel ME devices.Among them,the direct ME response,i.e.,magnetic-field control of polarization,can be exploited for micro-sensor applications(sensing magneticfield,electric current,light,etc.),mainly determined by a strain-mediated coupling interaction.The converse ME response,i.e.,electric-field modulation of magnetism,offers great opportunities for new potential devices for spintronics and in data storage applications.A series of prototype ME devices based on both direct and converse ME responses have been presented.The review concludes with a remark on the future possibilities and scientific challenges in thisfield.

关 键 词：MULTIFERROIC magnetoelectric effect composite thinfilm magnetoelectric devices memory devices 

分 类 号：O48[理学—固体物理]