FERROELECTRIC PROPERTIES OF(Bi_(0.5)Na_(0.5))TiO_(3)-BASED THIN FILM PREPARED BY PULSED LASER DEPOSITION  

作　　者：M.M.HEJAZI A.SAFARI 

机构地区：[1]Glenn Howatt Electroceramics Laboratories Department of Materials Science and Engineering Rutgers,The State University of New Jersey New Jersey 08854,USA

出　　处：《Journal of Advanced Dielectrics》2011年第1期57-61,共5页先进电介质学报（英文）

基　　金：The-nancial support of this work by the Glenn Howatt foundation is sincerely appreciated by the authors.

摘　　要：We have developed a uniform and dense epitaxial thinfilm of 0.94(Bi_(0.5)Na_(0.5))TiO_(3)-0.04×(Bi_(0.5)Na_(0.5))TiO_(3)-0.02BaTiO_(3)on a SrRuO_(3)coated SrTiO_(3)substrate by pulsed laser deposition method.The remnant polarization,coercivefield and dielectric constant of thefilm with thickness of 315 nm,were measured to be 16.6μC·cm^(-2),147.5 kV·cm^(-1)and 640(at 1 kHz),respectively.Thefilm exhibited a high breakdown voltage and low leakage current of 1.1×10^(-5)A·cm^(-2)at 310 kV·cm^(-1).This(Bi_(0.5)Na_(0.5))TiO_(3)-based thinfilm with a target composition in the rhombohedral side of the morphotropic phase boundary can be considered a potential candidate for relatively high power applications.

关 键 词：Thin-lm Bi_(0.5)Na_(0.5)TiO_(3) LEAD-FREE FERROELECTRIC 

分 类 号：TN2[电子电信—物理电子学]