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作 者:FEI LI SHUJUN ZHANG ZHUO XU ZHENRONG LI XIAOYONG WEI
机构地区:[1]Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education Xi'an Jiaotong University,Xi'an 710049,P.R.China [2]International Center for Dielectric Research Xi'an Jiaotong University,Xi'an 710049,P.R.China [3]Materials Research Institute,Pennsylvania State University University park,PA 16802,US
出 处:《Journal of Advanced Dielectrics》2011年第3期303-308,共6页先进电介质学报(英文)
基 金:supported by the National Basic Research Program of China(973 Program)under Grant No.2009CB623306;International Science and Technology Cooperation Program of China under Grant No.2010DFR50480;National Nature Science Foundation of China(Grant Nos.10976022 and 50632030).
摘 要:The longitudinal piezoelectric response of[001]poled rhombohedral and orthorhombic Pb(In_(1/2)Nb_(1/2))O_(3)-Pb(Mg_(1/3)Nb_(2/3))O_(3)-PbTiO_(3)crystals were investigated with respect to DC bias electric field,being in the range of-2-15 kV/cm.For rhombohedral crystals with compo-sitions far away from morphotropic phase boundary(MPB),the piezoelectric response generally decreased with increasing positive DC bias field,while for crystals with MPB compositions,the piezoelectric response firstly decreased and then increased as function of DC bias.The piezo-electric response was found to decrease drastically when DC bias larger than phase transition feld.On the other hand,the piezoelectric response was slightly enhanced for all the crystals as function of negative DC bias prior to the depolarization.To explain the obtained results,the field dependent piezoelectric cofficients in domain engineered crystals were analyzed based on ther-modynamic approach.
关 键 词:Relaxor-PT single crystals PIEZOELECTRICITY DC bias field
分 类 号:TG1[金属学及工艺—金属学]
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