Highly sensitive and stable β-Ga_(2)O_(3) DUV phototransistor with local back-gate structure and its neuromorphic application  

作　　者：Xiao-Xi Li Guang Zeng Yu-Chun Li Qiu-Jun Yu Meng-Yang Liu Li-Yuan Zhu Wenjun Liu Ying-Guo Yang David Wei Zhang Hong-Liang Lu 

机构地区：[1]State Key Laboratory of ASIC and System,Shanghai Institute of Intelligent Electronics&Systems,School of Microelectronics,Fudan University,Shanghai 200433,China [2]Shanghai Synchrotron Radiation Facility(SSRF),Zhangjiang Lab,Shanghai Advanced Research Institute&Shanghai Institute of Applied Physics,Chinese Academy of Sciences,Shanghai 201204,China

出　　处：《Nano Research》2022年第10期9359-9367,共9页纳米研究（英文版）

基　　金：supported by the National Natural Science Foundation of China(Nos.62027818,61874034,51861135105,and 51972319);International Science and Technology Cooperation Program of Shanghai Science and Technology Innovation Action Plan(No.21520713300);Science and Technology Commission of Shanghai Municipality(No.19520744400).

摘　　要：Deep ultraviolet(DUV)phototransistors are key integral of optoelectronics bearing a wide spectrum of applications in flame sensor,military detector,oil spill detection,biological sensor,and artificial intelligence fields.In order to further improve the responsivity of UV photodetectors based onβ-Ga_(2)O_(3),in present work,high-performanceβ-Ga_(2)O_(3) phototransistors with local back-gate structure were experimentally demonstrated.The phototransistor shows excellent DUV photoelectrical performance with a high responsivity of 1.01×107 A/W,a high external quantum efficiency of 5.02×109%,a sensitive detectivity of 2.98×1015 Jones,and a fast rise time of 0.2 s under 250 nm illumination.Besides,first-principles calculations reveal the decent stability ofβGa_(2)O_(3) nanosheet against oxidation and humidity without significant performance degradations.Additionally,the hexagonal boron nitride(h-BN)/β-Ga_(2)O_(3) phototransistor can behave as a photonic synapse with ultralow power consumption of~9.6 fJ per spike,which shows its potential for neuromorphic computing tasks such as facial recognition.Thisβ-Ga_(2)O_(3) phototransistor will provide a perspective for the next generation optoelectrical systems.

关 键 词：β-Ga_(2)O_(3)phototransistors local back-gate RESPONSIVITY stability photonic synapse 

分 类 号：TN3[电子电信—物理电子学]