一种CMOS工艺兼容的高效氮化硅表面光栅耦合器  

CMOS-compatible silicon nitride surface grating coupler with high efficiency

作　　者：韩风阳 王凌华 张雅珍[1] 黄继伟[1] HAN Fengyang;WANG Linghua;ZHANG Yazhen;HUANG Jiwei(College of Physics and Information Engineering,Fuzhou University,Fuzhou 350108,China)

机构地区：[1]福州大学物理与信息工程学院,福州350108

出　　处：《光通信技术》2022年第6期6-9,共4页Optical Communication Technology

基　　金：国家自然科学基金项目(61405198)资助;福建省教育厅项目(JAT190012)资助;福建省自然科学基金项目(2020J01467)资助。

摘　　要：为了有效简化表面光栅耦合器的制备工艺和降低制备难度,设计了一种互补金属氧化物半导体(CMOS)工艺兼容的高效氮化硅表面光栅耦合器,采用二维时域有限差分(2D-FDTD)算法对耦合器的结构进行了建模、优化和仿真,计算并对比了不同结构的耦合器光谱特性。研究结果表明:在标准绝缘体上硅(SOI)晶圆上,借助于CMOS后道工艺,所设计的氮化硅表面光栅耦合器在通信波长1550 nm附近的最高耦合效率为-3.36 d B,-3 d B带宽为101 nm。In order to effectively simplify the preparation process and reduce the preparation difficulty of surface grating coupler,a highly efficient silicon nitride surface grating coupler compatible with complementary metal oxide semiconductor(CMOS)technology is designed.The coupler structure is modeled,optimized and simulated using two-dimensional finite difference time domain(2D-FDTD) algorithm.The spectral characteristics of couplers with different structures are calculated and compared.The research results show that the designed silicon nitride surface grating coupler on the standard silicon on insulator(SOI) wafer,with the help of CMOS back channel process,has a maximum coupling efficiency of-3.36 dB and a bandwidth of-3 dB of 101 nm near the communication wavelength of 1550 nm.

关 键 词：表面光栅耦合器 耦合效率 集成光子器件 光学设计与制造 

分 类 号：O437.4[机械工程—光学工程] TN65[理学—光学]