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作 者:郑明辉 林丹 陈文铖 曲江英 穆英啸 籍少敏[1] 霍延平[1] Minghui Zheng;Dan Lin;Wen-Cheng Chen;Jiangying Qu;Yingxiao Mu;Shaomin Ji;Yanping Huo(School of Chemical Engineering and Light Industry,Guangdong University of Technology,Guangzhou 510006,China;School of Environment and Civil Engineering,Dongguan University of Technology,Dongguan 523808,China)
机构地区:[1]广东工业大学轻工化工学院,广州510006 [2]东莞理工学院生态环境与建筑工程学院,东莞523808
出 处:《中国科学:化学》2022年第10期1844-1851,共8页SCIENTIA SINICA Chimica
基 金:国家自然科学基金(编号:21975053,2197505,U2001222);广东省基础与应用基础研究基金(2019B1515120023)资助项目。
摘 要:本文以增强自旋轨道耦合(SOC)促进磷光发射为目的,在吩噻嗪(PTZ)结构的基础上引入苯乙腈以及硒酚基团设计并合成了分子ACN-PTZ与ACN-Se-PTZ.给体-受体(D-A)结构的引入使ACN-PTZ的发光效率相较于PTZ母体增大了两倍;而引入硒酚之后,分子ACN-Se-PTZ出现了明显的荧光淬灭现象,其光致发光量子产率相比于PTZ与ACN-PTZ显著降低.此外,分子ACN-Se-PTZ在低温(77 K)与室温下的发光寿命分别为269.93 ms与12.17μs,均高于分子ACN-PTZ(138.19 ms和11.73μs).本研究证实了通过引入硒酚修饰吩噻嗪,利用硒的重原子效应淬灭荧光有效促进分子的系间窜越(ISC)过程;引入的硒酚基团破坏了吩噻嗪母体的分子内电荷转移,导致ACN-SePTZ仅存在局域激发态跃迁.In this article,we designed and synthesized ACN-PTZ and ACN-Se-PTZ by introducing phenylacetonitrile and selenophenol groups to the phenothiazine(PTZ)structure aiming to enhance spin-orbit coupling(SOC)for room-temperature phosphorescence.Because of the introduction of the donor-acceptor(D-A)structure,the luminous efficiency of ACN-PTZ increased by two times compared with that of PTZ.ACN-Se-PTZ showed obvious fluorescence quenching after introducing selenophenol;its photoluminescence quantum yield was significantly lower than those of PTZ and ACN-PTZ.In addition,the long lifetimes of ACN-Se-PTZ in solution at low temperature(77 K)and room temperature are 269.93 ms and 12.17μs,respectively,which were higher than those of ACN-PTZ(138.19 ms and 11.73μs).Selenophene with a heavy atom effect substituted to the benzene ring of phenothiazine acted as an electron donor and quenched the fluorescence due to the promoted intersystem crossing(ISC)process.Various photophysical test results show that the introduced selenophene group destroyed the intramolecular charge transfer of the phenothiazine precursor,resulting in only localized excited state transitions in ACN-Se-PTZ.
分 类 号:TB34[一般工业技术—材料科学与工程]
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