Infrared stimulated emission with an ultralow threshold from low-dislocation-density InN films grown on a vicinal GaN substrate  

作　　者：Huapeng Liu Bowen Sheng Tao Wang Konstantin Kudryavtsev Artem Yablonskiy Jiaqi Wei Ali Imran Zhaoying Chen Ping Wang Xiantong Zheng Renchun Tao Xuelin Yang Fujun Xu Weikun Ge Bo Shen Boris Andreev Xinqiang Wang 

机构地区：[1]State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics,School of Physics,Peking University,Beijing 100871,China [2]Institute for Physics of Microstructures,Russian Academy of Sciences,Nizhny Novgorod 603950,Russia [3]Collaborative Innovation Center of Quantum Matter,Beijing 100871,China

出　　处：《Fundamental Research》2022年第5期794-798,共5页自然科学基础研究（英文版）

基　　金：partially supported by the National Natural Sci-ence Foundation of China(Grants No.61734001,61774004 and 61904002);the Beijing Outstanding Young Scientist Program(Grant No.BJJWZYJH0120191000103);the Science Challenge Project(Grant No.TZ2018003).

摘　　要：Near-infrared stimulated emission from a high-quality InN layer under optical pumping was observed with a threshold excitation power density of 0.3 and 4 kW cm^(−2) at T=8 and 77 K,respectively.To achieve such a low threshold power density,vicinal GaN substrates were used to reduce the edge-component threading dislocation(ETD)density of the InN film.Cross-sectional transmission electron microscopy images reveal that the annihilation of ETDs can be divided into two steps,and the ETD density can be reduced to approximately 5×10^(8) cm^(−2) near the surface of the 5-μm-thick film.The well-resolved phonon replica of the band-to-band emission in the photoluminescence spectra at 9 K confirm the high quality of the InN film.As a result,the feasibility of InN-based photonic structures and the underlying physics of their growth and emission properties are demonstrated.

关 键 词：INN Stimulated emission Vicinal substrate Phonon replica Molecular beam epitaxy 

分 类 号：O65[理学—分析化学]