B_(2)O_(3)和Ga_(2)O_(3)掺杂对ZnO压敏陶瓷电气性能的影响  被引量:3

Influence of B_(2)O_(3) and Ga_(2)O_(3) Doping on the Electrical Properties of ZnO Varistor Ceramics

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作  者:程宽 赵洪峰[1] 周远翔[2] CHENG Kuan;ZHAO Hongfeng;ZHOU Yuanxiang(The Wind Solar Storage Division of State Key Laboratory of Control and Simulation of Power System and Generation Equipment,School of Electrical Engineering Xinjiang University,Urumqi 830046,China;State Key Laboratory of Control and Simulation of Power Systems and Generation Equipment,Department of Electrical Engineering,Tsinghua University,Beijing 100084,China)

机构地区:[1]新疆大学电气工程学院电力系统及大型发电设备安全控制和仿真国家重点实验室风光储分室,乌鲁木齐830046 [2]清华大学电机工程与应用电子技术系电力系统及发电设备控制和仿真国家重点实验室,北京100084

出  处:《电瓷避雷器》2022年第5期108-112,118,共6页Insulators and Surge Arresters

基  金:国家自然科学基金重点资助项目(编号:51762038)。

摘  要:通流容量是ZnO压敏电阻的重要的电气参数,其大小决定着避雷器性能的优劣。笔者研究了B_(2)O_(3)和Ga_(2)O_(3)掺杂对ZnO压敏电阻预击穿区和翻转区下的电流-电压特性的影响。在预击穿区,B^(3+)和Ga^(3+)的掺杂提高了样品的晶界势垒,抑制了泄漏电流的增加,从而改善了样品在工作条件下的老化稳定性。而在翻转区,三价施主离子(B^(3+)和Ga^(3+))的掺杂致使I-V曲线右移,扩大了样品的非线性区,提高了样品对高脉冲电流放电的能力。掺杂0.3(摩尔分数)B_(2)O_(3)、0.1(摩尔分数)Ga_(2)O_(3)的样品具有优异的电气性能,其非线性系数和电压梯度分别达到88 V/mm和445 V/mm。B_(2)O_(3)和Ga_(2)O_(3)掺杂有助于提高ZnO避雷器的保护性能,从而改善电力系统的安全性和稳定性。The high-impulse current discharge capability is an important electrical parameter of ZnO varistor,which determines the quality of arrester.Therefore,the effects of B_(2)O_(3)and Ga_(2)O_(3)doping on the current voltage characteristics of ZnO varistors in the pre-breakdown and the upturn regions was studied.In the pre-breakdown zone,the doping of B^(3+)and Ga^(3+)increases the density of states of the sample surface,which increases the Schottky barrier height,suppresses the increase of leakage current and improves the aging stability of the sample under working conditions.In the upturn area,the trivalent donor ions(B^(3+)and Ga^(3+))enter the ZnO grains under the action of liquid phase assisted sintering to replace the positions of Zn^(2+) ions and release electrons,which improves the conductivity of the ZnO grains and reduces the residual voltage ratio of the sample.As a result,theI-Vcurve shifts to the right,which expands the non-linear region of the sample and improves the ability of the sample to discharge high pulse currents.The samples doped with 0.3(mol fraction)B_(2)O_(3)and 0.1(mol fraction)Ga_(2)O_(3)have excellent electrical properties:its nonlinear coefficient and voltage gradient reach 88 V/mm and 445 V/mm,respectively.The research results help to improve the protection performance of the arrester,thereby improving the safety and stability of the power system.

关 键 词:通流容量 非线性系数 电压梯度 泄漏电流 

分 类 号:TM54[电气工程—电器] TM862

 

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