一种新型阻变存储器1T2R存储单元  

A Novel RRAM 1T2R Memory Cell

作　　者：许永康 鲍嘉明[1] 陈瑞隆 戴澜[1] XU Yongkang;BAO Jiaming;CHEN Ruilong;DAI Lan(North China University of Technology,Beijing,100000,CHN;Xiamen Industrial Technology Research Institute,Xiamen,Fujian,360000,CHN)

机构地区：[1]北方工业大学,北京100000 [2]厦门工研院,福建厦门361000

出　　处：《固体电子学研究与进展》2022年第5期393-399,共7页Research & Progress of SSE

摘　　要：提出了一种新型阻变存储器(RRAM)1T2R结构,该结构利用一个大尺寸晶体管驱动两个忆阻器,弥补了工艺节点缩小带来的晶体管驱动能力不足的缺点。针对RRAM 1T2R结构中固有的串扰路径问题,专门设计的读方法可以截断串扰路径,抑制串扰电流,使得一个1T2R存储单元可以有效存储2 bit信息,提高RRAM的存储密度。同时,还可以通过直接读取BL上的电流对同一个存储单元内的2 bit信息做OR/NOR以及AND/NAND逻辑运算。本结构已利用UMC 28 nm工艺流片验证,流片结果为每个RRAM器件占有的平均面积为0.0355μm^(2),测试结果表明,本结构可以在读过程中有效抑制串扰电流,得到大的开关比,避免对高阻态RRAM的误读。A novel 1T2R structure of resistive random-access memory(RRAM)was proposed.This structure utilizes one large-size transistor to drive two memristors,which makes up for the short-coming of insufficient transistor drive capability caused by shrinking process nodes.In view of the in-herent sneak path problem in the RRAM 1T2R structure,the specially designed READ method can cut off the sneak path and suppress the sneak current,so that a 1T2R memory cell can effectively store 2 bit of information and improve the storage density of RRAM.In addition,this structure can al-so perform OR/NOR and AND/NAND logic computing on the 2 bit information stored in the same memory cell by directly reading the current on the BL.This structure has been taped out using the UMC 28 nm process,the tape-out result is that the average area occupied by each RRAM device is 0.0355μm^(2).The test results show that the structure can effectively suppress sneak current during the READ process,obtain a large ON/OFF ratio,and avoid misreading of the high-resistance state RRAM.

关 键 词：阻变存储器 1T2R 串扰电流 逻辑运算 

分 类 号：TN43[电子电信—微电子学与固体电子学]