静电微执行器拓宽行程范围技术的研究进展  

Review of Technology for Extending the Travel Range of Electrostatic Micro-actuator

作　　者：费宏欣 方玉明[1] 吴旭鹏 蔡滕 赵江[1] 李若舟 FEI Hongxin;FANG yuming;WU Xupeng;CAI Teng;ZHAO Jiang;LI Ruozhou(College of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing,210023,CHN)

机构地区：[1]南京邮电大学集成电路科学与工程学院,南京210023

出　　处：《固体电子学研究与进展》2022年第5期405-411,共7页Research & Progress of SSE

基　　金：江苏省研究生科研与实践创新计划项目(SJCX21_0273);国家自然科学基金青年基金项目(11904177,61704090);南京邮电大学射频集成与微组装技术国家地方联合工程实验室开放课题(KFJJ20210205)。

摘　　要：Pull-in失稳现象是MEMS/NEMS微执行器中的一种常见现象,容易引起执行器件产生电流击穿,直接影响到器件的稳定性和寿命。需要根据不同的应用场合避免或利用该效应。针对Pull-in失稳现象,研究了失稳机理,从拓宽和调整其行程范围的角度,综述了各种抑制和控制Pull-in失稳现象的方法。总结对比了各种方法的原理、从相关技术角度讨论各方法优缺点,其中涉及工艺技术有MUMPS工艺、BiCMOS工艺和LPCVD工艺,这三种技术在向着低成本、高性能、高产量等方向更新工艺标准。未来拓宽微执行器稳定行程范围方法主要在电路设计、优化结构,且向着可行性、可靠性方向发展。Pull-in instability is a common phenomenon in MEMS/NEMS micro-actuators,which can easily cause current breakdown of the actuator,which directly affects the stability and life of the device.This effect needs to be avoided or exploited depending on the application.Aiming at the phenomenon of Pull-in instability,this paper studies the mechanism of instability,and summarizes various methods to suppress and control the phenomenon of Pull-in instability from the perspective of widening and adjusting its travel range.Summarized and compared the principles of various methods,and discussed the advantages and disadvantages of each method from the perspective of related technologies.The process technologies involved include MUMPS process,BiCMOS process and LPCVD process.These three technologies are updating process standard in the direction of low cost,high performance and high yield.In the future,the method of expanding the stable stroke range of the microactuator is mainly in the circuit design,optimizing the structure,and developing in the direction of feasibility and reliability.

关 键 词：Pull-in失稳现象 拓宽行程范围 微执行器 可靠性 

分 类 号：TN402[电子电信—微电子学与固体电子学]