常温C^(4+)辐照对多晶HIP-SiC力学性能的影响  

Effect of C^(4+) Irradiation on Mechanical Property of Polycrystalline HIP-SiC at Room Temperature

作　　者：易柏全 刘旭东[1] 郝祖龙[1] YI Baiquan;LIU Xudong;HAO Zulong(Beijing Key Laboratory of Passive Safety Technology for Nuclear Energy,North China Electric Power University,Beijing 102206,China)

机构地区：[1]华北电力大学非能动核能安全技术北京市重点实验室,北京102206

出　　处：《原子能科学技术》2022年第12期2601-2606,共6页Atomic Energy Science and Technology

基　　金：北京市自然科学基金(1192016);中央高校基本科研业务费专项资金(2020MS031)。

摘　　要：热等静压(HIP)法具有提高材料致密度、抑制晶粒生长、避免晶粒取向等优点,常用于制备多晶6H-SiC材料。为探究HIP法制备的多晶6H-SiC辐照损伤特性,评价HIP工艺下碳化硅材料作为耐事故燃料包壳的可行性,以多晶6H-SiC为研究对象,分析样品辐照前后的性能、结构等变化。为防止其他元素对实验造成影响,实验采用的辐照离子为C ^(4+),辐照剂量为1.8 dpa和5 dpa,并设置1组未辐照样品作对比。通过运用SEM、纳米压痕、XRD、拉曼光谱等测试分析多晶6H-SiC在离子辐照前后表面特征和性能参数的变化。研究结果表明,样品材料元素成分占比无明显变化,而硬度略有下降,晶格呈现损伤现象,但辐照很快趋于饱和且结构上未发生改变。因此从离子辐照方面分析,整体上HIP制备的多晶6H-SiC抗辐照能力较强,具有作为未来事故容错燃料基体的可能性。Different from other preparation processes,hot isostatic pressing(HIP)has the advantages of improving material density,inhibiting grain growth and avoiding grain orientation,and is often used to prepare polycrystalline 6H-SiC materials.Silicon carbide has the characteristics of high melting point,high hardness,corrosion resistance,good thermal conductivity,and will not react with water to produce hydrogen,so it is one of the candidate materials for accident-tolerant fuel(ATF)cladding.In order to investigate the irradiation damage characteristics of polycrystalline 6H-SiC prepared by HIP and evaluate the feasibility of silicon carbide material as ATF cladding under HIP process,the experiment took polycrystalline 6H-SiC as the research object,and analyzed the properties and structure changes of samples before and after irradiation.In order to prevent the influence of other elements on the experiment,the irradiation ion was C ^(4+),the irradiation dose was 1.8 dpa and 5 dpa,and a group of non-irradiated samples were set for comparison.The surface characteristics and properties of polycrystalline 6H-SiC before and after ion irradiation were analyzed by SEM,nano indentation,XRD and Raman spectroscopy.The results show that,with the increase of C ^(4+)ion irradiation dose,the relative strength of the Raman curve of HIP-SiC sample decreases gradually.Although C ^(4+)irradiation damages the HIP-SiC lattice structure to a certain extent,and the sample diffraction peak intensity decreases and shifts,the peak value changes slightly with the increase of the irradiation dose,indicating that the irradiation tends to saturate quickly.After C ^(4+)ion irradiation,the sample material has defects and the nano-hardness shows a decreasing trend,but the decreasing degree is not obvious.Therefore,the analysis of ion irradiation,the total number of polycrystalline 6H-SiC anti-irradiation capacity of the overall hip preparation,has the possibility of being the matrix of the fault in the future.

关 键 词：耐事故燃料包壳 HIP-SiC 离子辐照 性能表征 

分 类 号：TL341[核科学技术—核技术及应用]