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作 者:彭港 陈耿旭 PENG Gang;CHEN Gengxu(College of Physics and Information Engineering,Fuzhou University,Fuzhou 350108,CHN)
机构地区:[1]福州大学物理与信息工程学院,福州350108
出 处:《光电子技术》2022年第3期207-212,共6页Optoelectronic Technology
摘 要:利用四甲氧基硅烷(TMOS)易水解形成低聚二氧化硅(OS)的特性,结合双钙钛矿Cs2AgBiBr6与有机半导体材料IDTBT优异的光电特性,通过调整低聚二氧化硅的厚度来实现对有机薄膜晶体管(OTFT)突触性能的调控。模拟了突触的兴奋性后突触电流(EPSC)、双脉冲易化(PPF)等基本功能,并进一步实现突触晶体管加速学习功能。研究有望为搭建低能耗的人工神经网络提供一种有效的方案。Based on the excellent photoelectric characteristics of double perovskite material Cs2AgBiBr6and organic semiconductor material IDTBT,the synaptic characteristics of the organic thin film transistor(OTFT)could be controlled by adjusting the thickness of the oligomeric silicon dioxide(OS)layer from hydrolyzation of Tetramethoxysilane(TMOS). The device fully simulated the basic functions of biological synapses,such as excitatory post-synaptic(EPSC),paired-pulse facilitation(PPF). In addition,accelerating the learning process of the OTFT was successfully simulated,which was expected to provide an effective strategy for constructing artificial neural networks with low energy consumption.
分 类 号:TN386.4[电子电信—物理电子学]
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