双层有源氧化物IGZTO TFT的光照特性研究  

Study on Electrical Performances of the Bilayer α-IGZTO Thin Film Transistor under Light Illumination

作　　者：杨金玲 YANG Jinling(Nanjing BOE Display Technology Co.,Ltd.,Nanjing 210033,CHN)

机构地区：[1]南京京东方显示技术有限公司,南京210033

出　　处：《光电子技术》2022年第3期218-221,共4页Optoelectronic Technology

摘　　要：研究了一种双层有源层的氧化物IGZTO TFT器件在光照下的特性,对比单层有源层的氧化物TFT,这种双层有源层的氧化物上层比较稳定,光照下产生的光生空穴与自由电子复合的数量大大减少,起导电作用的空穴载流子较多,故表现出了较大幅度的电流提升。进一步的研究展示了这种双层有源氧化物TFT在不同光照条件下的特性曲线,可为光敏器件提供不同的应用场景。The characteristics of bilayer α-IGZTO TFT device under light were studied. Compared with the single-layer α-IGZTO TFT,the upper layer of the bilayer α-IGZTO TFT was relatively stable in structure,so the number of photogenerated holes and free electrons recombined under light was greatly reduced,leading to more hole carriers,and therefore it showed a large current increase.Furthermore,the characteristic curves of this bilayer active oxide TFT under different illumination conditions were displayed,implying that this TFT could be used as a potential photosensitive sensor.

关 键 词：双层有源层 铟镓锌锡氧化物 薄膜晶体管 光照特性 

分 类 号：TN141[电子电信—物理电子学]