电磁熔配制备P型硅锗合金热电半导体材料  

Preparation of P-type Silicon-Germanium Alloy Thermoelectric Semiconductor Materials by Electromagnetic Metallurgy

作　　者：华俊森 吕国强[1,2] 马文会[1,2] 魏奎先[1,2] 李绍元[1,2] 雷云[1,2] HUA Junsen;LYU Guoqiang;MA Wenhui;WEI Kuixian;LI Shaoyuan;LEI Yun(National Engineering Laboratory of Vacuum Metallurgy,Faculty of Metallurgy and Energy Engineering,Kunming University of Science and Technology,Kunming 650093,China;The State Key Laboratory of Clean Utilization of Complex Non-ferrous Metals Co-constructed by the Ministry of Science and Technology,Kunming University of Science and Technology,Kunming 650093,China)

机构地区：[1]昆明理工大学冶金与能源工程学院,真空冶金国家工程实验室,昆明650093 [2]昆明理工大学省部共建复杂有色金属资源清洁利用国家重点实验室,昆明650093

出　　处：《有色金属工程》2022年第12期22-27,108,共7页Nonferrous Metals Engineering

基　　金：国家自然科学基金资助项目(51864031)。

摘　　要：采用电磁熔配法制备了掺杂B(含量分别为0.5%、1%、1.5%、2%,均为原子百分数,下同)的P型硅锗合金热电半导体材料,根据对样品的物相分析和微观形貌分析确定电磁熔配法使硅锗完成合金化的条件,并检测制备的P型硅锗合金热电半导体样品在200~800℃下的热电性能。结果表明:电磁搅拌熔配、保温120 min并使用二次冷却结晶方式可以使硅锗完成合金化,并且可以减少冷却结晶过程中锗的析出,提升样品均匀性;电磁熔配法制备的掺杂B含量为1.5%的P型硅锗合金热电半导体在800℃下的热电优值能够达到0.43。该方法制备工艺简单,制备时间短,可重复性强,为硅锗热电材料的制备提供一种新思路。P-type silicon-germanium alloy thermoelectric semiconductor materials doped with B(contents of 0.5at.%,1at.%,1.5at.%,2at.%)were prepared by electromagnetic fusion method.According to the phase analysis and microscopic morphology analysis of the samples,the conditions for the alloying of silicon germanium by electromagnetic fusion method were determined,and the thermoelectric properties of the prepared P-type silicon germanium alloy thermoelectric semiconductor samples at 200 to 800℃were tested.The results show that electromagnetic stirring fusion,holding for 120 min and using the secondary cooling crystallization method can complete the alloying of silicon germanium,and can reduce the precipitation of germanium during the cooling crystallization process and improve the uniformity of the sample;the doped B prepared by the electromagnetic fusion method.The thermoelectric figure of merit of the P-type silicon-germanium alloy thermoelectric semiconductor with a content of 1.5at%can reach 0.43 at 800℃.The method has the advantages of simple preparation process,short preparation time and strong repeatability,and provides a new idea for the preparation of silicon germanium thermoelectric materials.

关 键 词：高温热电材料 硅锗合金 电磁冶金法 均匀性 热电性能 

分 类 号：TG115[金属学及工艺—物理冶金]