From microelectronics to spintronics and magnonics  

作　　者：Xiu-Feng Han Cai-Hua Wan Hao Wu Chen-Yang Guo Ping Tang Zheng-Ren Yan Yao-Wen Xing Wen-Qing He Guo-Qiang Yu 韩秀峰;万蔡华;吴昊;郭晨阳;唐萍;严政人;邢耀文;何文卿;于国强(Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,University of Chinese Academy of Sciences,Beijing 100190,China)

机构地区：[1]Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,University of Chinese Academy of Sciences,Beijing 100190,China

出　　处：《Chinese Physics B》2022年第11期12-22,共11页中国物理B（英文版）

基　　金：Project supported by the National Key Research and Development Program of China(Grants No.2017YFA0206200);the National Natural Science Foundation of China(Grant Nos.51831012 and 12134107);the Beijing Natural Science Foundation(Grant No.Z201100004220006)。

摘　　要：In this review,the recent developments in microelectronics,spintronics,and magnonics have been summarized and compared.Firstly,the history of the spintronics has been briefly reviewed.Moreover,the recent development of magnonics such as magnon-mediated current drag effect(MCDE),magnon valve effect(MVE),magnon junction effect(MJE),magnon blocking effect(MBE),magnon-mediated nonlocal spin Hall magnetoresistance(MNSMR),magnon-transfer torque(MTT)effect,and magnon resonant tunneling(MRT)effect,magnon skin effect(MSE),etc.,existing in magnon junctions or magnon heterojunctions,have been summarized and their potential applications in memory and logic devices,etc.,are prospected,from which we can see a promising future for spintronics and magnonics beyond micro-electronics.

关 键 词：magnon valve effect magnon junction effect magnon resonant tunneling effect magnon-transfer torque effect 

分 类 号：O469[理学—凝聚态物理]