A theoretical investigation of glide dislocations in BN/AlN heterojunctions  

作　　者：Shujun Zhang 张淑君(Department of Physics,Chongqing Three Gorges University,Wanzhou 404100,China)

机构地区：[1]Department of Physics,Chongqing Three Gorges University,Wanzhou 404100,China

出　　处：《Chinese Physics B》2022年第11期404-411,共8页中国物理B（英文版）

摘　　要：Glide dislocations with periodic pentagon-heptagon pairs are investigated within the theory of one-dimensional misfit dislocations in the framework of an improved Peierls–Nabarro(P–N)equation in which the lattice discreteness is fully considered.We find an approximate solution to handle misfit dislocations,where the second-order derivative appears in the improved P–N equation.This result is practical for periodic glide dislocations with narrow width,and those in the BN/AlN heterojunction are studied.The structure of the misfit dislocations and adhesion work are obtained explicitly and verified by first-principles calculations.Compared with shuffle dislocations,the compression force in the tangential direction of glide dislocations has a greater impact on the normal direction,and the contributions of the normal displacement to the interfacial energy cannot simply be ignored.

关 键 词：interfacial misfit dislocation misfit dislocation energy 

分 类 号：O772[理学—晶体学]