Investigation of transport properties of perovskite single crystals by pulsed and DC bias transient current technique  

作　　者：Juan Qin Gang Cao Run Xu Jing Lin Hua Meng Wen-Zhen Wang Zi-Ye Hong Jian-Cong Cai Dong-Mei Li 秦娟;曹港;徐闰;林婧;孟华;王文贞;洪子叶;蔡健聪;李冬梅(School of Materials Science and Engineering,Shanghai University,Shanghai 200444,China;Zhejiang Institute of Advanced Materials,Shanghai University,Jiashan 314113,China)

机构地区：[1]School of Materials Science and Engineering,Shanghai University,Shanghai 200444,China [2]Zhejiang Institute of Advanced Materials,Shanghai University,Jiashan 314113,China

出　　处：《Chinese Physics B》2022年第11期465-469,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.12175131 and 11905133);the China Postdoctoral Science Foundation(Grant No.2021M692021)。

摘　　要：Time-of-flight(ToF)transient current method is an important technique to study the transport characteristics of semiconductors.Here,both the direct current(DC)and pulsed bias ToF transient current method are employed to investigate the transport properties and electric field distribution inside the MAPbI_(3) single crystal detector.Owing to the almost homogeneous electric field built inside the detector during pulsed bias ToF measurement,the free hole mobility can be directly calculated to be about 22 cm^(2)·V^(-1)·s^(-1),and the hole lifetime is around 6.5μs–17.5μs.Hence,the mobility-lifetime product can be derived to be 1.4×10^(-4)cm^(2)·V^(-1)–3.9×10^(-4)cm^(2)·V^(-1).The transit time measured under the DC bias deviates with increasing voltage compared with that under the pulsed bias,which arises mainly from the inhomogeneous electric field distribution inside the perovskite.The positive space charge density can then be deduced to increase from 3.1×10^(10)cm^(-3)to 6.89×10^(10)cm^(-3)in a bias range of 50 V–150 V.The ToF measurement can provide us with a facile way to accurately measure the transport properties of the perovskite single crystals,and is also helpful in obtaining a rough picture of the internal electric field distribution.

关 键 词：MAPbI3 space charge density electric field distribution time-of-flight measurement 

分 类 号：TB34[一般工业技术—材料科学与工程]