Fluorine-plasma treated AlGaN/GaN high electronic mobility transistors under off-state overdrive stress  

作　　者：Dongyan Zhao Yubo Wang Yanning Chen Jin Shao Zhen Fu Fang Liu Yanrong Cao Faqiang Zhao Mingchen Zhong Yasong Zhang Maodan Ma Hanghang Lv Zhiheng Wang Ling Lv Xuefeng Zheng Xiaohua Ma 赵东艳;王于波;陈燕宁;邵瑾;付振;刘芳;曹艳荣;赵法强;钟明琛;张亚松;马毛旦;吕航航;王志恒;吕玲;郑雪峰;马晓华(Beijing Engineering Research Center of High-reliability IC with Power Industrial Grade,Beijing Smart-Chip Microelectronics Technology Co.,Ltd.,Beijing 100192,China;Beijing Chip Identification Technology Co.,Ltd.,Beijing 102200,China;School of Electro-Mechanical Engineering,Xidian University,Xi'an 710071,China;Key Lab of Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi'an 710071,China)

机构地区：[1]Beijing Engineering Research Center of High-reliability IC with Power Industrial Grade,Beijing Smart-Chip Microelectronics Technology Co.,Ltd.,Beijing 100192,China [2]Beijing Chip Identification Technology Co.,Ltd.,Beijing 102200,China [3]School of Electro-Mechanical Engineering,Xidian University,Xi'an 710071,China [4]Key Lab of Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi'an 710071,China

出　　处：《Chinese Physics B》2022年第11期493-499,共7页中国物理B（英文版）

基　　金：Project supported by the Laboratory Open Fund of Beijing Smart-Chip Microelectronics Technology Co.,Ltd;the National Natural Science Foundation of China(Grant Nos.11690042 and 12035019);the National Major Scientific Research Instrument Projects(Grant No.61727804);the Natural Science Foundation of Shaanxi Province,China(Grant No.2022-JM-386)。

摘　　要：Influences of off-state overdrive stress on the fluorine-plasma treated AlGaN/GaN high-electronic mobility transistors(HEMTs)are experimentally investigated.It is observed that the reverse leakage current between the gate and source decreases after the off-state stress,whereas the current between the gate and drain increases.By analyzing those changes of the reverse currents based on the Frenkel–Poole model,we realize that the ionization of fluorine ions occurs during the off-state stress.Furthermore,threshold voltage degradation is also observed after the off-state stress,but the degradations of AlGaN/GaN HEMTs treated with different F-plasma RF powers are different.By comparing the differences between those devices,we find that the F-ions incorporated in the GaN buffer layer play an important role in averting degradation.Lastly,suggestions to obtain a more stable fluorine-plasma treated AlGaN/GaN HEMT are put forwarded.

关 键 词：AlGaN/GaN HEMT fluorine plasma treatment off-state overdrive stress 

分 类 号：TB34[一般工业技术—材料科学与工程] TN386[电子电信—物理电子学]