用于离子注入机的高压放大器的研制  

Developmentof High Voltage Amplifier for Ion Implanter

作　　者：金则军 JIN Zejun(Changsha Branch of Beijing Semicore ZKX Electronic Equipment Co.,Ltd.,Changsha 410000,China)

机构地区：[1]北京烁科中科信电子装备有限公司长沙分公司,湖南长沙410000

出　　处：《电子工业专用设备》2022年第5期18-23,共6页Equipment for Electronic Products Manufacturing

摘　　要：针对我国用于离子注入机的高压放大器输出峰值电压一般处于±10 kV的现状,研制了一种双极高速高压功率放大器,输出最大峰值电压为±20 kV,输出最大功率为400 W。为了提高耐压能力,功率管以双极型晶体管为主体,由MOSFET和IGBT串联,采用AB类工作模式通过推挽放大器的上、下两个功率管实现放大功能。经过仿真实验,实现了输出电压放大,同时实现了信号低噪声、响应频带宽、压摆率高、输出响应快等特性,对提高我国半导体设备水平以及国产化程度具有重要意义。With response to the current situation that the output peak voltage of the high-voltage amplifier used in domestic ion implanters is less than±10 kV,a bipolar high-speed high-voltage power amplifier is developed,which has a maximum output peak voltage of±20 kV and a maximum output power of 400 W.In order to improve the capacity to withstand voltage,power tubes are used based on bipolar transistors,which are connected in series by MOSFETs and IGBTs.The amplification effect is achieved through the top and bottom tubes of the push-pull amplifier in class AB class operation mode.Through simulation experiment,apart from output voltage amplification,the characteristics of low noise,wide response bandwidth,high voltage slew rate,and quick output response are achieved,which is of great significance to improve the level of semiconductor equipment in China and the degree of localization.

关 键 词：离子注入机 AB类放大器 高压放大器 

分 类 号：TN305[电子电信—物理电子学]