碲锌镉晶片精密抛光效果的影响因素分析  

Analysis on the Influence Factors of High Precision Polishing Effect for CZT Wafer

作　　者：种宝春[1] 徐品烈[1] 张文斌[1] CHONG Baochun;XU Pinlie;ZHANG Wenbin(The 45th Research Institute of CETC,Beijing 100176,China)

机构地区：[1]中国电子科技集团公司第四十五研究所,北京100176

出　　处：《电子工业专用设备》2022年第5期24-28,共5页Equipment for Electronic Products Manufacturing

摘　　要：碲锌镉(CZT,CdZnTe)晶片是生长红外焦平面列阵所用碲镉汞(HgCdTe)薄膜的衬底材料.为了满足碲镉汞液相外延的性能要求,采用化学机械抛光可获得平面度高、粗糙度低、无损伤层的碲锌镉晶片表面。通过对抛光结构的机械运动分析,建立了抛光过程中各参数对工艺指标的影响,通过实验优化工艺参数获得高质量的抛光效果。CZT(Cadmium Zinc Telluride,CdZnTe)wafer is the substrate material of mercury HgCdTe thin films used to grow infrared focal plane arrays.In order to meet the performance requirements of mercury cadmium telluride liquid epitaxy,the surface of CZT wafer is chemically polished to obtain high precision flatness and low roughness without damage.Through the mechanical motion analysis of the polishing structure,establishes the influence of various process parameters of polishing motion,and the high quality polishing effect is obtained by optimizing process parameters.

关 键 词：碲锌镉晶体 机械抛光运动 工艺实验设计 

分 类 号：TN305.1[电子电信—物理电子学]