Interfacial dynamics of GaP/Si(100) heterostructure grown by molecular beam epitaxy  

作　　者：Tieshi Wei Xuefei Li Zhiyun Li Wenxian Yang Yuanyuan Wu Zhiwei Xing Shulong Lu 

机构地区：[1]Key Laboratory of Nanodevices and Applications,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China [2]Nano Science and Technology Institute,University of Science and Technology of China,Suzhou 215123,China [3]Vacuum Interconnected Nanotech Workstation(NANO-X),Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China

出　　处：《Journal of Semiconductors》2022年第12期32-38,共7页半导体学报（英文版）

基　　金：supported in part by the National Key R&D Program(Grant No.2018YFB2003305);the National Natural Science Foundation of China(Grant Nos.61774165,61704186,and 61827823);the program from SINANO(Y8AAQ11003 and Y4JAQ21005)。

摘　　要：The atomic structure and surface chemistry of GaP/Si(100)heterostructure with different pre-layers grown by molecu-lar beam epitaxy are studied.It is found that GaP epilayer with Ga-riched pre-layers on Si(100)substrate has regular surface mor-phology and stoichiometric abrupt heterointerfaces from atomic force microscopes(AFMs)and spherical aberration-corrected transmission electron microscopes(ACTEMs).The interfacial dynamics of GaP/Si(100)heterostructure is investigated by X-ray photoelectron spectroscopy(XPS)equipped with an Ar gas cluster ion beam,indicating that Ga pre-layers can lower the inter-face formation energy and the bond that is formed is more stable.These results suggest that Ga-riched pre-layers are more con-ducive to the GaP nucleation as well as the epitaxial growth of GaP material on Si(100)substrate.

关 键 词：XPS interfacial dynamics GaP/Si(100)heterostructure MBE 

分 类 号：TQ133.51[化学工程—无机化工] TN304.054[电子电信—物理电子学]