Emitter layer optimization in heterojunction bifacial silicon solar cells  

作　　者：Adnan Shariah Feda Mahasneh 

机构地区：[1]Department of Physics,Jordan University of Science and Technology,Irbid 22110,Jordan

出　　处：《Journal of Semiconductors》2022年第12期65-71,共7页半导体学报（英文版）

摘　　要：Silicon solar cells continue to dominate the market,due to the abundance of silicon and their acceptable efficiency.The heterojunction with intrinsic thin layer(HIT)structure is now the dominant technology.Increasing the efficiency of these cells could expand the development choices for HIT solar cells.We presented a detailed investigation of the emitter a-Si:H(n)lay-er of a p-type bifacial HIT solar cell in terms of characteristic parameters which include layer doping concentration,thickness,band gap width,electron affinity,hole mobility,and so on.Solar cell composition:(ZnO/nc-Si:H(n)/a-Si:H(i)/c-Si(p)/a-Si:H(i)/nc-Si:H(p)/ZnO).The results reveal optimal values for the investigated parameters,for which the highest computed efficiency is 26.45%when lighted from the top only and 21.21%when illuminated from the back only.

关 键 词：HIT solar cells bifacial solar cells nano-crystalline silicon films gradient doping parameter optimization 

分 类 号：TM914.4[电气工程—电力电子与电力传动]