透射电子显微镜在数字合金结构与性能表征方面的应用  

Application of transmission electron microscopy in digital alloy structure and property characterization

作　　者：李璧丞 吴雨旸 彭春根 车仁超[1,2,3,4] LI Bi-cheng;WU Yu-yang;PENG Chun-gen;CHE Ren-chao(Laboratory of Advanced Materials,Fudan University,Shanghai 200438;Shanghai Key Lab of Molecular Catalysis and Innovative Materials,Fudan University,Shanghai 200438;Academy for Engineering&Technology,Fudan University,Shanghai 200438;Zhejiang Laboratory,Hangzhou Zhejiang 311100,China)

机构地区：[1]复旦大学先进材料实验室,上海200438 [2]复旦大学上海市分子催化和功能材料重点实验室,上海200438 [3]复旦大学工程与应用技术研究院,上海200438 [4]之江实验室,浙江杭州311100

出　　处：《电子显微学报》2022年第6期601-605,共5页Journal of Chinese Electron Microscopy Society

基　　金：国家自然科学基金资助项目(Nos.52231007,51725101,11727807);科技部重点研发(973 Project Nos.2021YFA1200600,2018YFA0209100)。

摘　　要：透射电子显微镜因其全面系统的测试条件,成为材料微观领域研究的有效手段。本文利用透射电镜对AlInAsSb数字合金的显微结构进行了系统的研究。通过几何相位分析,发现AlAs插层中的砷原子有沿生长方向扩散的趋势。此外,利用能带结构模拟和电子全息技术揭示了AlAs插层间对电荷分布的影响。这种研究方法显示了透射电镜在半导体材料微观表征方面的优越性,对构建半导体器件的微观结构和宏观性能的联系具有很高的指导价值。The comprehensive and systematic test capability of transmission electron microscope(TEM)makes it an ideal instrument for microscopic detection in the field of material science.In this work,the microstructures of AlInAsSb digital alloys have been systematically investigated by TEM.Based on geometric phase analysis,we find that arsenic atoms in AlAs intercalations tend to diffuse along the growth direction.In addition,the band structure simulations and electron holography are utilized to unveil the effect of AlAs intercalation thickness on the distribution of carriers.This work shows the superiority of TEM in the microscopic characterization of semiconductor materials,which shows an important role in the relation between microstructure to macro performance in semiconductor devices.

关 键 词：透射电子显微镜 数字合金 电子全息 几何相位分析 

分 类 号：TB383[一般工业技术—材料科学与工程] TG115.215.3[金属学及工艺—物理冶金]