Heavy ion‑induced MCUs in 28nm SRAM‑based FPGAs:upset proportions,classifications,and pattern shapes  

作　　者：Shuai Gao Xin‑Yu Li Shi‑Wei Zhao Ze He Bing Ye Li Cai You‑Mei Sun Guo‑Qing Xiao Chang Cai Jie Liu 

机构地区：[1]Institute of Modern Physics,Chinese Academy of Sciences,Lanzhou 730000,China [2]University of Chinese Academy of Sciences,Beijing 100049,China [3]School of Physics and Electronic Information Engineering,Jining Normal University,Ulanqab 012000,China [4]State Key Laboratory of ASIC and System,Fudan University,Shanghai 201203,China

出　　处：《Nuclear Science and Techniques》2022年第12期128-137,共10页核技术（英文）

基　　金：supported by the National Natural Science Foundation of China(Nos.12035019 and 11690041).

摘　　要：For modern scaling devices,multiple cell upsets(MCUs)have become a major threat to high-reliability field-programmable gate array(FPGA)-based systems.Thus,both performing the worst-case irradiation tests to provide the actual MCU response of devices and proposing an effective MCU distinction method are urgently needed.In this study,high-and medium-energy heavy-ion irradiations for the configuration random-access memory of 28 nm FPGAs are performed.An MCU extraction method supported by theoretical predictions is proposed to study the MCU sizes,shapes,and frequencies in detail.Based on the extraction method,the different percentages,and orientations of the large MCUs in both the azimuth and zenith directions determine the worse irradiation response of the FPGAs.The extracted largest 9-bit MCUs indicate that high-energy heavy ions can induce more severe failures than medium-energy ones.The results show that both the use of high-energy heavy ions during MCU evaluations and effective protection for the application of high-density 28 nm FPGAs in space are extremely necessary.

关 键 词：FPGAS Heavy ions Multiple cell upsets Extraction Worse irradiation 

分 类 号：TP333[自动化与计算机技术—计算机系统结构] TN791[自动化与计算机技术—计算机科学与技术]