甚长波碲镉汞光伏探测器伏安特性分析  

Analysis of I-V characteristics of HgCdTe VLWIR photovoltaic detectors

作　　者：林立[1] 刘世光 田震[1] 程杰 LIN Li;LIU Shi-guang;TIAN Zhen;CHENG Jie(The 11th Research Institute of CETC,Beijing 100015,China)

机构地区：[1]中国电子科技集团公司第十一研究所,北京100015

出　　处：《激光与红外》2022年第11期1666-1670,共5页Laser & Infrared

基　　金：国家重点研发计划项目(No.2016YFB0500700)资助。

摘　　要：分析了注入同质结N-on-P和液相外延异质结P-on-N碲镉汞甚长波红外探测器在不同工作温度下的I-V特性,并对R-V特性进行了仿真计算,对比了扩散电流、产生-复合电流、表面漏电流、带间隧穿电流和缺陷辅助隧穿电流等暗电流对两种器件R-V特性的不同影响。In this paper,the I-V characteristics of B ion implanted N-on-P homojunction and LPE P-on-N heterojunction HgCdTe VLWIR photovoltaic detectors at different operating temperatures are analyzed,and the R-V characteristics are simulated and calculated to compare the different effects of dark currents such as diffusion current,generation-recombination current,surface leakage current,direct band-to-band tunneling current and trap-assisted tunneling current on the R-V characteristics of the two devices.

关 键 词：大气超光谱 甚长波红外探测器 碲镉汞 I-V特性 R-V特性 

分 类 号：TN214[电子电信—物理电子学]