双离子束溅射Al_(2)O_(3)高温绝缘薄膜的氧分压研究  

Study on Dual Ion Beam Sputtering Oxygen Partial Pressure of Al_(2)O_(3)High Temperature Resistant Insulating Thin Film

作　　者：闫博 黄漫国[2,3] 郭林琪 梁晓波 张丛春 YAN Bo;HUANG Man-guo;GUO Lin-qi;LIANG Xiao-bo;ZHANG Cong-chun(Department of Micro/Nano Electronics,School of Electronic Information and Electrical Engineering,Shanghai Jiao Tong University,Shanghai 200240,China;AVIC Beijing Changcheng Aeronautical Measurement and Control Technology Research Institute,Beijing 101111,China;Aviation Key Laboratory of Science and Technology on Special Condition Monitoring Sensor Technology,Beijing 101111,China)

机构地区：[1]上海交通大学电子信息与电气工程学院微纳电子学系,上海200240 [2]航空工业北京长城航空测控技术研究所先进传感器技术中心,北京101111 [3]状态监测特种传感技术航空科技重点实验室,北京101111

出　　处：《测控技术》2022年第12期8-12,35,共6页Measurement & Control Technology

基　　金：国家重点研发计划(2020YFB200102);国家基础研究项目(2019-JCJQ-ZD-309)。

摘　　要：采用双离子束溅射沉积法(DIBSD)制备了用作高温绝缘层的Al_(2)O_(3)薄膜,分析了所制备Al_(2)O_(3)薄膜的表面和截面形貌,研究了溅射氧分压对薄膜氧铝元素比的影响,并进一步探讨了氧铝元素比对Al_(2)O_(3)薄膜高温绝缘性能的影响。研究结果表明:双离子束溅射沉积法制备的Al_(2)O_(3)薄膜表面平整度高,粗糙度约为2.86 nm,截面形貌致密,没有微裂纹、空隙等缺陷;溅射氧分压的提高可以增加所制备Al_(2)O_(3)薄膜的氧铝元素比例,18%溅射氧分压下制备的Al_(2)O_(3)薄膜O∶Al约为1.44,接近Al_(2)O_(3)化合物的元素比;18%氧分压溅射的Al_(2)O_(3)薄膜,在1000℃具有6.5 MΩ的绝缘电阻值,高温绝缘性能良好。Al_(2)O_(3) thin film is prepared by dual ion beam sputtering deposition(DIBSD)as high temperature resistant insulation.The surface topography and cross section morphology of the prepared Al_(2)O_(3) thin film is discussed.Also,the effect of sputtering oxygen partial pressure on ratio of oxygen to aluminum(O∶Al ratio)is studied.Moreover,the effect of O∶Al ratio on the high temperature insulating properties of Al_(2)O_(3) thin films is further discussed.The results show that the Al_(2)O_(3) film prepared by double ion beam sputtering deposition has high surface flatness with 2.86 nm roughness,dense crosssection morphology and no defects such as microcracks and pinholes.The increase of sputtering oxygen partial pressure can increase the O∶Al ratio of Al_(2)O_(3) films.The O∶Al ratio of Al_(2)O_(3) films prepared under 18%sputtering oxygen partial pressure is about 1.44,which is close to the element ratio of Al_(2)O_(3) compounds.The Al_(2)O_(3) film sputtered by 18%oxygen partial voltage has an insulation resistance of 6.5 MΩ at 1000℃ and good insulation performance at high temperature.

关 键 词：双离子束溅射沉积法 Al_(2)O_(3)薄膜 高温绝缘 溅射氧分压 氧铝元素比 

分 类 号：V23[航空宇航科学与技术—航空宇航推进理论与工程] TP212[自动化与计算机技术—检测技术与自动化装置]