蚀刻液组成对薄膜晶体管线路蚀刻性能的影响  

Influence of Mixed Etching Solution Composition on Etching Performance of Thin Film Transistor Circuits

作　　者：林钢 陈远明 张汉焱 谢泽雄 Lin Gang;Chen Yuanming;Zhang Hanyan;Xie Zexiong(Guangdong Shantou Ultrasonic Electronics Co.,Ltd.,Shantou 515041,China;Shantou Ultrasonic Display Technology Co.,Ltd.,Shantou 515041,China)

机构地区：[1]广东汕头超声电子股份有限公司,广东汕头515041 [2]汕头超声显示器技术有限公司,广东汕头515041

出　　处：《云南化工》2022年第12期24-26,31,共4页Yunnan Chemical Technology

摘　　要：为了提高MoNb、AlNd金属薄膜的蚀刻速率,且使二者的蚀刻速率基本相同,采用改变蚀刻液各组分质量分数的方法进行了研究。结果表明,在蚀刻温度为45℃,磷酸质量分数为66.74%,硝酸质量分数为1.93%,醋酸质量分数为10.3%,水质量分数为8.3%时,AlNd、MoNb的蚀刻速率基本相等。通过蚀刻液各组分含量的优化,可以获得对MoNb、AlNd具有相同蚀刻速率的最佳配比。In order to improve the etching rate of MoNb and AlNd metal films and make them basically the same,the method of changing the mass fraction of each component in the mixed etching solution was adopted.The results show that when the etching temperature is 45℃,the mass fraction of phosphoric acid is 66.74%,the mass fraction of nitric acid is 1.93%,the mass fraction of acetic acid is 10.3%,and the mass fraction of water is 8.3%,the etching rates of AlNd and MoNb are just the same.The optimum ratio of MoNb and AlNd with the same etching rate can be obtained by optimizing the content of each component in the mixed etching solution.

关 键 词：蚀刻速率 MoNb薄膜 AlNd薄膜 金属蚀刻液 晶体管线路 

分 类 号：TG178[金属学及工艺—金属表面处理]