一种氧化锌纳米线突触晶体管的研究  

Study on a single ZnO nanowire synapse transistor

作　　者：陈凡 CHEN Fan(School of Information Engineering,Xiamen Marine Technical College,Xiamen,Fujian 361000,China)

机构地区：[1]厦门海洋职业技术学院信息工程学院,福建厦门361000

出　　处：《信息记录材料》2022年第11期31-34,共4页Information Recording Materials

摘　　要：本文制备了一种低功耗的单根ZnO纳米线晶体管,发现其具有作为电子突触器件前提的阈值可调性,即可以通过改变阈值调节器件电导。通过实验研究,我们成功地在该ZnO-NW晶体管上模拟出生物突触的长时程增强/抑制、突触饱和、与人体大脑类似的遗忘和“学习-经验”行为等行为。In this paper,a single ZnO nanowire transistor with low power consumption is prepared and found to have threshold adjustability as a prerequisite for electronic synaptic devices,that is,the device conductance can be adjusted by changing the threshold.Through experimental studies,we have successfully simulated the long-term potentiation(LTP),longterm depression(LTD),synaptic saturation,forgetting and“learning-experience”behaviors of the biological synapse on the ZnO-NW transistor.

关 键 词：电子突触器件 低功耗 ZnO纳米线晶体管 生物突触行为 

分 类 号：TN3[电子电信—物理电子学]