基于GaAs HBT有源自适应偏置的高线性度功率放大器设计  

Design of high linearity power amplifier with active adaptive bias based on GaAs HBT

作　　者：焦凌彬 姚凤薇[1] JIAO Lingbin;YAO Fengwei(School of Electronic Information,Shanghai Dian Ji University,Shanghai 201306,China)

机构地区：[1]上海电机学院电子信息学院,上海201306

出　　处：《电子元件与材料》2022年第11期1202-1208,共7页Electronic Components And Materials

基　　金：上海市自然科学基金(17ZR1411100)。

摘　　要：采用2μm砷化镓(GaAs)异质结双极型晶体管(HBT)工艺设计和实现了一种3.3~3.8 GHz的高线性度射频(RF)功率放大器(PA)。采用了一种改进的有源自适应偏置电路结构,既提高了静态偏置电流的稳定性和可控性,又对增益压缩起到了抑制作用。优化了各级匹配网络,抑制了谐波分量的影响,在低电源电压下实现了较高的增益和良好的线性指标。仿真结果显示:测量的小信号增益大于33.4 dB;1 dB压缩点功率为31.3 dBm@3.55 GHz;功率附加效率超过30%@3.55 GHz;输出功率为20 dBm时,IMD3低于-50 dBc。实测数据表明:小信号增益大于31.2 dB;输出功率为20 dBm时,IMD3低于-40 dBc;输出功率为27.56 dBm时,相邻信道泄露比为-37.62 dBc。A 3.3-3.8 GHz high linearity radio frequency power amplifier was designed and realized by using 2μm GaAs HBT process.An improved active adaptive bias circuit structure was adopted,which improved the stability and controllability of the static bias current and suppressed the gain compression at the same time.To suppress the influence of harmonic components,the matching networks of different level were optimized,leading to higher gain and better linearity under low supply voltage.The simulation results show that the measured small signal gain is greater than 33.4 dB;the 1dB compression point power is 31.3 dBm@3.55 GHz;The power added efficiency exceeds 30%@3.55 GHz.When the output power is 20dBm,the IMD3 is lower than-50 dBc.The measured data show that the small signal gain is greater than 31.2 dB.When the output power is 20 dBm,the IMD3 is lower than-40 dBc.When the output power is 27.56 dBm,the leakage ratio of adjacent channels is-37.29 dBc.

关 键 词：射频功率放大器 有源自适应偏置电路 匹配网络 高线性度 

分 类 号：TN722[电子电信—电路与系统] TN7431