Bi/C_(3)N_(5)光催化材料制备及降解活性  

Preparation and Degradation Activity of Bismuth Doped C_(3)N_(5) Photocatalytic Materials

作　　者：白惊雷 杨斌盛[1] 刘斌[1] BAI Jinglei;YANG Binsheng;LIU Bin(Institute of Molecular Science,Shanxi University,Taiyuan 030006,China)

机构地区：[1]山西大学分子科学研究所,山西太原030006

出　　处：《山西大学学报（自然科学版）》2022年第5期1319-1325,共7页Journal of Shanxi University(Natural Science Edition)

基　　金：山西省“1331工程”-工程研究中心。

摘　　要：为了提升C_(3)N_(5)的光催化污水降解活性,采用煅烧法,将Bi掺杂至C_(3)N_(5)获得Bi/C_(3)N_(5),使C_(3)N_(5)获得更高的可见光响应和低电子空穴复合。通过X射线光电子能谱(XPS)、红外光谱(FT-IR)、X射线粉末衍射(XRD)、扫描电子显微镜(SEM)等手段对该半导体材料进行了表征。与C_(3)N_(5)相比,Bi/C_(3)N_(5)材料带隙减小,对太阳光的响应范围增大,光照产生的电子-空穴复合率降低,阻抗降低,电荷迁移率提高,说明光催化性能得到提高。在模拟太阳光照下,进行了亚甲基蓝(MB)光催化降解活性研究,实验结果表明Bi/C_(3)N_(5)对MB的降解效率比C_(3)N_(5)提高了近40%。In order to improve the photocatalytic degradation activity of C_(3)N_(5),Bi/C_(3)N_(5)was obtained by doping Bi into C_(3)N_(5)through calcination. The semiconductor material was characterized by X-ray photoelectron spectroscopy(XPS),infrared spectroscopy(FTIR),X-ray powder diffraction(XRD)and scanning electron microscopy(SEM). Compared with the C_(3)N_(5),Bi/C_(3)N_(5)material has smaller band gap,larger response range to sunlight,lower electron-hole composite rate generated by light,lower impedance,and higher charge mobility,indicating that photocatalytic performance has been improved. Under simulated solar light,the photocatalytic degradation activity by degrade methylene blue(MB)was studied. The experimental results showed that the degradation efficiency of Bi/C_(3)N_(5)to MB was nearly 40% higher than that of C_(3)N_(5).

关 键 词：光催化材料金属铋 C_(3)N_(5) 光催化降解 亚甲基蓝 

分 类 号：O644.19[理学—物理化学]