一种开关电容带隙基准电压源  

A Switched Capacitor Bandgap Reference

作　　者：祝少良 李文昌[1,2] 张铁良 赵进才 刘剑 尹韬[1,2] Zhu Shaoliang;Li Wenchang;Zhang Tieliang;Zhao Jincai;Liu Jian;Yin Tao(Institute of Semiconductors,Chinese Aeademy of Sciences,Bejing 100083,China;University of Chinese Academy of Sciences,Bejing 100049,China;Beijing Microeletronics Technology Institute,Beijing 100076,China)

机构地区：[1]中国科学院半导体研究所,北京100083 [2]中国科学院大学,北京100049 [3]北京微电子技术研究所,北京100076

出　　处：《半导体技术》2022年第11期879-885,共7页Semiconductor Technology

基　　金：国家自然科学基金资助项目(61974146)。

摘　　要：设计了一款高精度、低线性调整率的开关电容带隙基准电压源。分析了NMOS开关高温漏电流对基准输出电压精度的影响,提出了一种高温漏电补偿电路。偏置电路采用多个共源共栅结构的电流镜,增大了从电源到输出的阻抗,降低了基准电压的线性调整率。利用虚拟管抵消了开关关断时带来的沟道电荷注入效应和时钟馈通效应,提高了基准输出电压的精度。该电路基于0.35μm CMOS工艺设计,仿真结果表明,基准源能稳定输出1.1 V电压,建立时间为5.9μs;在-55~125℃,温度系数为1.38×10-5/℃;27℃下,在2.7~5 V电源电压范围内,线性调整率为0.9 mV/V;电路总静态电流为35.1μA。A switched capacitor bandgap reference with high precision and low linearity regulation was designed.The influence of high temperature leakage current of NMOS switch on the precision of the output reference voltage was analyzed,and a high temperature leakage current compensation circuit was proposed.Multiple cascode current mirrors were adopted in the bias circuit to increase the impedance from the power supply to the output and reduce the linear regulation of the reference voltage.In addition,the virtual FET was used to offset the charge injection and the clock feed-through effect during the switch was turned off,thereby improving the accuracy of the output reference voltage.The circuit was designed based on the 0.35μm CMOS process.The simulation results show that the output reference voltage is 1.1 V stably,and the settling time is 5.9μs.At-55-125℃,the temperature coefficient is 1.38×10/℃.At 27℃,in the power supply voltage range of 2.7-5 V,the linear regulation is 0.9 mV/V,and the total quiescent current of the circuit is 35.1μA.

关 键 词：带隙基准电压源 温度系数 线性调整率 开关漏电流 虚拟管 

分 类 号：TN432[电子电信—微电子学与固体电子学]