用于磨削6H-SiC晶片的陶瓷结合剂金刚石砂轮制备及磨削试验研究  

Experimental Study on Preparation of Vitrified Bond Diamond Grinding Wheel for Grinding 6H-SiC Wafer

作　　者：王超超 张凤林[3] 欧阳承达 陈基松 张健 毛俊波 Wang Chaochao;Zhang Fenglin;Ouyang Chengda;Chen Jisong;Zhang Jian;Mao Junbo(Guangdong Polytechnic of Industry and Commerce,Guangzhou 510550,China;不详)

机构地区：[1]广东工贸职业技术学院,广州市510550 [2]广州华立学院 [3]广东工业大学

出　　处：《工具技术》2022年第12期48-51,共4页Tool Engineering

摘　　要：使用自制的陶瓷结合剂金刚石砂轮磨削6H-SiC晶片,研究了6H-SiC晶片材料去除方式和砂轮的磨损机理。研究结果表明:6H-SiC晶片材料去除方式主要是脆性断裂,磨削后晶片的表面粗糙度为Ra0.108μm,且砂轮部分气孔被磨屑填充,金刚石磨粒有轻微的破碎与磨损现象。The designed vitrified diamond grinding wheel is used for grinding 6 H-SiC wafer.In this paper,the material removal mechanism of 6 H-SiC wafer and the wear mechanism of vitrified bond diamond grinding wheel are investigated.The result shows that the surface roughness of 6 H-SiC wafer is 0.108μm.A brittle mode dominated the material removal of 6 H-SiC wafer is observed.After grinding,some pores are covered by debris and some bonded diamond grits are slightly fractured and worn out.

关 键 词：陶瓷结合剂 金刚石砂轮 6H-SiC晶片 表面粗糙度 

分 类 号：TG743[金属学及工艺—刀具与模具] TH161.14[机械工程—机械制造及自动化]