Ge/Si_(x)Ge_(1-x)衬底620 nm半导体激光器的特性  

Properties of 620 nm Semiconductor Lasers with Ge/Si_(x)Ge_(1-x) Substrate

作　　者：林涛[1,2] 解佳男 穆妍 李亚宁 孙婉君 张霞霞 杨莎 米帅 Lin Tao;Xie Jianan;Mu Yan;Li Yaning;Sun Wanjun;Zhang Xiaxia;Yang Sha;Mi Shuai(College of Automation and Information Engineering,Xi’an University of Technology,Xi’an 710048,Shaanxi,China;Shaanxi Key Laboratory of Complex System Control and Intelligent Information Processing,Xi’an University of Technology,Xi’an 710048,Shaanxi,China)

机构地区：[1]西安理工大学自动化与信息工程学院,陕西西安710048 [2]西安理工大学陕西省复杂系统控制与智能信息处理重点实验室,陕西西安710048

出　　处：《激光与光电子学进展》2022年第19期227-233,共7页Laser & Optoelectronics Progress

基　　金：陕西省重点研发计划(2020GY044);陕西省创新团队支持计划(2021TD25);西安市科技计划(2020KJRC0077,2019219814SYS013CG035)。

摘　　要：短波长红光激光是激光显示、生物医学等应用领域急需开发的一种新波段光源。基于Ge/Si_(x)Ge_(1-x)衬底设计并模拟分析了一种波长为620 nm的红光半导体激光器。该激光器使用Ge衬底以及Si_(x)Ge_(1-x)基体层,通过改变Si_(x)Ge_(1-x)层中的Si摩尔分数调整激光器结构中每层AlGaInP系材料的晶格常数,从而实现高Ga摩尔分数的GaInP量子阱并将GaInP量子阱的激光波长缩短至620 nm。通过计算SiGe、AlGaInP系材料的物理参数,研究了GaInP量子阱有源区结构和Si_(x)Ge_(1-x)基体层组分对输出特性的影响规律,优化了激光器的结构参数。模拟结果表明,298 K温度下设计的激光器输出波长为620 nm,阈值电流为0.58 A,输出功率为1.20 W,转换效率为38.3%。Shortwavelength red laser is a new wavelength light source that is urgently needed to be developed for laser display and biomedical applications.In this paper,a red light semiconductor laser with a wavelength of 620 nm has been designed and simulated based on a Ge/Si_(x)Ge_(1−x) substrate.The laser uses a Ge substrate and a Si_(x)Ge_(1−x) substrate layer.By changing the Si mole fraction in the Si_(x)Ge_(1−x) layer,the lattice constant of each layer of the AlGaInP materials in the laser structure is adjusted to achieve a GaInP quantum well with a high Ga mole fraction and shorten the laser wavelength of the GaInP quantum well to 620 nm.By calculating the physical parameters of SiGe and AlGaInP materials,the influence law of GaInP quantum well active region structure and Si_(x)Ge_(1−x) substrate layer components on the output characteristics is studied,and the structural parameters of the laser are optimized.The simulation results show that the laser designed at 298 K temperature has an output wavelength of 620 nm,a threshold current of 0.58 A,an output power of 1.20 W,and a conversion efficiency of 38.3%.

关 键 词：激光器 半导体激光器 短波长红光激光 晶格调制 Ge/Si_(x)Ge_(1-x)衬底 

分 类 号：TN248.4[电子电信—物理电子学]