离子束辅助电子束蒸镀H4膜工艺及其抗激光损伤特性研究  

Preparing H4 Films and Their Laser Damage Resistance Deposited Using Ion-Beam-Assisted Electron Beam Evaporation

作　　者：李晓雪 黄玲程 郝永芹 Li Xiaoxue;Huang Lingcheng;Hao Yongqin(State Key Laboratory of High Power Semiconductor Laser,Changchun University of Science and Technology,Changchun 130022,Jilin,China;Beijing OptoElectronics Technology Co.,Ltd.,Beijing 100015,China)

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,吉林长春130022 [2]北京雷生强式科技有限责任公司,北京100015

出　　处：《激光与光电子学进展》2022年第19期381-386,共6页Laser & Optoelectronics Progress

基　　金：国家自然科学基金(11474038);吉林省科技发展计划项目(20200401073GX)。

摘　　要：采用等离子体辅助电子束镀膜法制备了钛酸镧(H4)薄膜,研究了基底温度和离子束流密度等工艺条件及高温退火和等离子体后处理技术对H4薄膜的光学特性和表面形貌的影响。实验发现,适当地提高基底温度和离子束流密度可以提高薄膜折射率和薄膜质量。在基底温度为175℃,离子束流密度为120μA/cm^(2)时,薄膜折射率最高为2.70,且退火和等离子体后处理技术可进一步使薄膜质量得到改善。将优化的工艺参数用于980 nm高反射膜的镀制,并与采用Ta_(2)O_(5)、TiO_(2)作为高反射率材料的高反膜进行了比较,在600 MW/cm^(2)的激光作用下,H4高反膜系的抗激光损伤特性最优。LaTiO_(3)(H4)films were prepared using ionbeamassisted electron beam evaporation.The effect of substrate temperature,ionbeam density,hightemperature annealing,and plasma posttreatment on the optical properties and surface topography of the H4 films were tested.Results show that increasing the substrate temperature and ionbeam density appropriately can improve the refractive index and film quality.Under 175°C substrate temperature and 120μA/cm^(2) ionbeam density,the refractive index of the H4 films can reach 2.70.Moreover,annealing and plasma posttreatment can further improve the film quality.The optimized process parameters were used to prepare high reflection(HR)films with H4 for a 980-nm laser diode.The HR films with H4 exhibit the best laser damage resistance under 600 MW/cm^(2) laser power density when compared with the HR films made with Ta_(2)O_(5) or TiO_(2) as highindex materials.

关 键 词：薄膜 离子束辅助电子束镀膜 钛酸镧(H4) 腔面膜 折射率 

分 类 号：TN205[电子电信—物理电子学] O484[理学—固体物理]