基于铟镓锌氧化物的纸基柔性薄膜晶体管器件研究  

Study on Paper-Based Flexible Thin-Film Transistor Based on Indium Gallium Zinc Oxide

作　　者：孙云龙 杨厅 陈铠 章红科 Sun Yunlong;Yang Ting;Chen Kai;Zhang Hongke(Jiangxi Copper Technology Research Institute Co.,Ltd.,Nanchang 330096,Jiangxi,China)

机构地区：[1]江西铜业技术研究院有限公司,江西南昌330096

出　　处：《激光与光电子学进展》2022年第19期387-392,共6页Laser & Optoelectronics Progress

摘　　要：目前大多数柔性薄膜晶体管(TFT)使用塑料基板替代玻璃基板会导致白色污染加重,本研究采用可降解的纳米纤维素纸作为柔性基板,其具有粗糙度仅为3.12 nm的优异平滑度,且整个器件沉积完后只增加至6.03 nm。更重要的是,该TFT器件通过磁控溅射制备IGZO/Al_(2)O_(3)作为有源层,使得器件在室温下无需热退火处理,避免了纳米纸不耐高温的问题。在有源层中,Al_(2)O_(3)充当电子桥连接了不连续的铟镓锌氧化物(IGZO),且IGZO有着微弱的结晶,大量的载流子得以沿沟道流通。该纸基器件展示出迁移率为22.5 cm^(2)/(V·s)、开关比高达5.07×10^(6)、阈值电压Vth仅为-0.036 V的优异性能,并且有着很好的正偏压和负偏压稳定性。这种纸基TFT在未来的绿色且柔性显示中具有巨大的应用潜力。Most flexible thinfilm transistors employ plastic substrates instead of glass substrates,increasing white pollution.In this study,the flexible substrate is degradable nanocellulose paper,which has excellent smoothness with a roughness of only 3.12 nm that only increases to 6.03 nm after fabricating the entire device.Notably,the active layer of the paperbased thinfilm transistors prepared using magnetron sputtering is IGZO/Al_(2)O_(3).Therefore,the device can be fabricated at room temperature without undergoing thermal annealing,overcoming the limitation of nanopaper’s inability to withstand high temperatures.Al_(2)O_(3) acts as an electronic bridge in the active layer,connecting the discontinuous indium gallium zinc oxide(IGZO).Furthermore,because IGZO is weakly crystalline,numerous carriers can circulate along the channel.The paperbased device exhibits excellent performance with a mobility of 22.5 cm^(2)/(V·s),an onoff ratio of 5.07×10^(6),and a threshold voltage Vth of−0.036 V as well as good stability at positive and negative bias voltages.This paperbased thinfilm transistor has great potential for applications in the green and flexible display industry.

关 键 词：薄膜 铟镓锌氧化物 薄膜晶体管 纳米纸 室温制备 

分 类 号：O484[理学—固体物理]