基于不同位置掺硼直拉单晶硅片的PERC电池的原位光衰及电注入复原  

In-situ LID and electrical-injection regeneration of PERC solar cells made from different positions of a boron-doped Cz-Si ingot

作　　者：丁思琪 覃诚 杨宸 艾斌 DING Siqi;QIN Cheng;YANG Chen;AI Bin(School of Materials Science and Engineering,Sun Yat-sen University/Guangdong Provincial Key Laboratory of Photovoltaic Technologies,Guangzhou 510006,China)

机构地区：[1]中山大学材料科学与工程学院/广东省光伏技术重点实验室,广东广州510006

出　　处：《中山大学学报（自然科学版）（中英文）》2023年第1期115-123,共9页Acta Scientiarum Naturalium Universitatis Sunyatseni

基　　金：国家自然科学基金(61774171)。

摘　　要：将1根商业化太阳能级掺硼直拉单晶硅(Cz-Si,Czochralski silicon)棒,从头至尾间隔一定距离切割出5组硅片,采用标准工业化工艺流程将它们制成钝化发射极和背面电池(PERC,passivated emitter and rear cell),然后对其进行了暗退火(200℃,30 min)→第1次光衰(45℃,1 sun,12 h)→电注入复原(175℃,18 A,30 min)→第2次光衰(45℃,1 sun,12 h)处理,并对其在处理过程中的性能变化进行了跟踪测试。结果表明,所制备的PERC电池的光衰(LID,light induced degradation)和复原(regeneration)由B-O缺陷的光衰和复原反应起主导作用,而Fe-B对的分解起次要作用。第1次光衰时7.03%~9.69%的效率相对降级率,由B-O缺陷引起的光衰和Fe-B对的分解共同造成;而第2次光衰时0.43%~0.81%的效率相对降级率,由Fe-B对的分解单独造成。电注入复原能够完全钝化PERC电池内部的B-O缺陷,且钝化后的B-O缺陷在第2次光衰条件下是稳定的。由硅棒中部硅片制成的PERC电池具有更高的效率和开路电压以及更低的相对衰减率。此外,光衰和复原处理只影响PERC电池在中长波段的光谱响应。Five groups of silicon wafers were cut from a commercial solar-grade boron-doped Czochralski silicon(Cz-Si)ingot from top to bottom with a certain distance,and made into PERC(passivated emitter and rear cell)solar cells by using the standard industrial process.Then,as-prepared PERC solar cells were treated by dark annealing(200℃,30 min),the 1st LID(45℃,1 sun,12 h),electric-injection regeneration(175℃,18 A,30 min)and the 2nd LID(45℃,1 sun,12 h)in order,and the changes of performance during the process were measured.The results show that the LID(light induced degradation)and regeneration of the PERC solar cells are dominated by those of B-O defects,while dissociation of Fe-B pairs plays a secondary role.The relative degradation rate of 7.03%~9.69%in efficiency during the 1st LID results from the LID caused by B-O defects and the dissociation of Fe-B pairs,while the relative degradation rate of 0.43%~0.81%in efficiency during 2nd LID is solely caused by the dissociation of Fe-B pairs.B-O defects inside PERC solar cells can be completely passivated by the electric injection regeneration,and the passivated B-O defects are stable under the conditions of 2nd LID.PERC solar cells made from the middle of the Czochralski silicon ingot have higher efficiency and open circuit voltage and lower relative degradation rate.In addition,only the spectral response of PERC solar cells in medium and long wavelength range is affected by the LID and regeneration treatment.

关 键 词：PERC电池 光致衰减 电注入复原 B-O缺陷 

分 类 号：TM615[电气工程—电力系统及自动化]