预稳压高低温补偿高精度带隙基准电压源  

A high or low temperature compensation bandgap reference voltage with pre-regulated voltage circuit

作　　者：刘晓轩 李海松[1] 曹天骄[1] 李婷 LIU Xiaoxuan;LI Haisong;CAO Tianjiao;LI Ting(Xi′an Microelectronic Technology Institute,Xi′an 710071,China)

机构地区：[1]西安微电子技术研究所,陕西西安710071

出　　处：《西北工业大学学报》2022年第6期1360-1365,共6页Journal of Northwestern Polytechnical University

基　　金：“十三五”核高基国家重大专项(2017ZX01006101)资助。

摘　　要：分析了带隙基准电压分段补偿技术与基本原理,提出一种具有预稳压功能的高低温补偿带隙基准电路。应用高低温补偿电路优化了温度系数,设置预稳压电路提高了带隙基准电路的电源抑制比。基于0.35μm标准CMOS工艺设计并绘制了电路及版图。仿真结果表明,在-55~125℃范围内,温漂系数仅为1.8×10^(-6)/℃;电源抑制比为-84.6 dB(在1 kHz下);在2.6~5 V的电源幅度范围下,电源抑制性能为19.6μV/V。该电路可应用于高精度系统设计中。The paper analyzes the principles of piecewise compensation technology and then proposes a high or low temperature compensation bandgap reference circuit that has pre-regulated voltage. The high or low temperature compensation circuit is utilized to optimize the power supply rejection ratio and the temperature drift coefficient. The standard 0.35 μm CMOS process is used to design the circuit and its layout. The simulation results show that the temperature drift coefficient is 1.8×10^(-6)/℃ in the range from-55 to 125℃, that the power supply rejection ratio is-84.6 dB at 1 kHz and that the power supply rejection performance is only 19.6 μV/V.

关 键 词：分段补偿 预稳压电路 带隙基准 低温漂 

分 类 号：TN432[电子电信—微电子学与固体电子学]